Consider an ideal PN diode; draw the I-V characteristics under the following conditions. Assume the energy bandgap is constant with temperature. (a) Assume dopants are fully ionized, draw I-V curves at temperature of T₁ and T2 (T₁ 5000 K. Please explain. (hint: how does a doped semiconductor behave at high temperature?)

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Chapter4: Transmission Line Parameters
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Consider an ideal PN diode; draw the I-V characteristics under the following conditions. Assume
the energy bandgap is constant with temperature.
(a)) Assume dopants are fully ionized, draw I-V curves at temperature of T₁ and T2 (T₁)
<T₂) in one plot and label them. Please explain.
(Hint: compare the reverse current and forward current qualitatively at two temperatures)
(b) Assume dopants are fully ionized, draw I-V curve at super high temperature T >
5000 K. Please explain. (hint: how does a doped semiconductor behave at high
temperature?)
Transcribed Image Text:Consider an ideal PN diode; draw the I-V characteristics under the following conditions. Assume the energy bandgap is constant with temperature. (a)) Assume dopants are fully ionized, draw I-V curves at temperature of T₁ and T2 (T₁) <T₂) in one plot and label them. Please explain. (Hint: compare the reverse current and forward current qualitatively at two temperatures) (b) Assume dopants are fully ionized, draw I-V curve at super high temperature T > 5000 K. Please explain. (hint: how does a doped semiconductor behave at high temperature?)
Symbol
EG
Ne
Ny
n₁
Er Si
Er,SiO2
To
X
Value
1.12 eV
2.8 x 1019 cm-3
1.04
x 101⁹ cm-3
10¹0 cm-3
11.8
3.9
10-6 s
4.01 eV
Esi Eger,Si
10-12 F/cm
Properties of silicon (Si at 300K).
Mobility (cm²/V-s)
1600
1400
1200
1000
800
600
400
200
0
1014
(a)
1020
1018
1016
1014
1012
1010
1016 1017 10
N₂ + N₂ (ions/cm³)
Intrinsic carrier concentration vs. temperature
10⁰
104
10⁰
10²
Symbol
q
kT/q
KTIn(10)
Eo
KB
h
1015
mo
1 eV
Ge
Carrier mobility in silicon
0.026V
60 meV at 300K
8.85 × 10-¹4 F/cm
8.62-105 eV/K or 1.38×10-23 J/K
GaAs
Value
1.6 x 10-19 C
Physical constants
www
4.14-10-15 eV-s
9.1-10-31 kg
1.6 x 10-19 J
GaP
Ha
1019 10
1
0 200 400 600 800 1000 1200 1400 1600 1800
TEMPERATURE IN K
Transcribed Image Text:Symbol EG Ne Ny n₁ Er Si Er,SiO2 To X Value 1.12 eV 2.8 x 1019 cm-3 1.04 x 101⁹ cm-3 10¹0 cm-3 11.8 3.9 10-6 s 4.01 eV Esi Eger,Si 10-12 F/cm Properties of silicon (Si at 300K). Mobility (cm²/V-s) 1600 1400 1200 1000 800 600 400 200 0 1014 (a) 1020 1018 1016 1014 1012 1010 1016 1017 10 N₂ + N₂ (ions/cm³) Intrinsic carrier concentration vs. temperature 10⁰ 104 10⁰ 10² Symbol q kT/q KTIn(10) Eo KB h 1015 mo 1 eV Ge Carrier mobility in silicon 0.026V 60 meV at 300K 8.85 × 10-¹4 F/cm 8.62-105 eV/K or 1.38×10-23 J/K GaAs Value 1.6 x 10-19 C Physical constants www 4.14-10-15 eV-s 9.1-10-31 kg 1.6 x 10-19 J GaP Ha 1019 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 TEMPERATURE IN K
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