Define the Miller indices of the cubic crystal plane that intersects the following position coordinates: (a) (1/2, 0, 1/2); (O, 0, 1); (1, 1, 1); (b) (0, 0, 1/2); (1, 0, 0); (1/2, 1/4, 0)
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- State the Miller indices of the planes that intersect the crystallographic axes at the distances (2a, 3b, 2c) and (2a, 2b, ∞c).What point defects are possible for Al2O3 as an impurity in MgO? How many Al3+ ions must be added to form each of these defects? Explain.Calculate the planer density of planes (0:-1:-1) for BCC, and FCC crystal structures?
- Describe a-dislocations, c-dislocations and c+a dislocations, which may be possible in HCP crystals. Give specific examples from Mg and a-Zr. Include any citation(s) that you use to answer the question1.At -185°C and 1 atm ethane (MW = 30.07 g/mol) exists as a solid with a FCC structure. Using the data provided below: E/k=194.1K, bo=0.1794 m3/kmol Determine the diameter of one molecule of ethane (in angstroms). 2. What is the void fraction? 3. Find the density of the solid etahne. 4. Calculate the distance of separation (in m) between two ethane molecules when the potential energy is at a minimum. 5. At the separation distance calculated in part (4), determine the minimum value of the potential energy between two molecules (in J).The coordinates, in units of a, of the atoms in a cubic P unit cell are (0,0,0), (0,1,0), (0,0,1), (0,1,1), (1,0,0), (1,1,0), (1,0,1), and (1,1,1). Calculate the structure factor Fhkl when all the atoms are identical. Where possible, simplify your expression by using einπ = (-1)n, as in Example 15B.1.
- Using a simple infinite barrier approximation, calculate the “effective bandgap” of a 10 nm GaAs/AlGaAs quantum well grown along [001] direction. If there is a one-monolayer fluctuation in the well size, how much will the effective bandgap change? This example gives an idea of how stringent the control has to be in order to exploit heterostructures.In detail outline the phenomenon and the cause of phase transitions in polymer systems.Define defects ( point, line, planar or volume defects) and impurities in crystal structures. Are they favourable?
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