Example 2 : Find the current flowing through R1, R2, R3, R4 and Vx if Vs = 10 V, R1 = 1kQ, R2 -330Ω, R-2.2kΩ and R-670Ω R1 R3 a) Assuming Ideal diode b) Silicon Diode c) Germanium diode d) Reversing the Power supply Vs and all R4 diodes are silicon R2
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- a. SketchtheoutputvoanddeterminethedcleveloftheoutputforthenetworkofFig.2.49. Repeat part (a) if the ideal diode is replaced by a silicon diode. Repeat parts (a) and (b) if Vm is increased to 200 V, and compare solutions using Eqs. (2.7) and (2.8).Apply each of diodeapproximations and determine:a. Current through D1b. Voltage across D2c. Voltage across R3 GIVEN: R1 = 2 kΩ, R2 = 1.2 kΩ, R3 = 6.8 kΩ E= 10 V D1: Si, rB = 2 Ω, rR = 220 kΩ D2: Si, rB = 5 Ω, rR = 560 kΩ DETERMING FIRST IF IT IS A FORWARD BIASED OR REVERSED BIASED THEN, SOLVE IN FIRST APPROXIMATION, SECOND APPROXIMATION AND THIRD APPROXIMATION SHOW THE CIRCUIT DIAGRAM IN EACH APPROXIMATIONGiven the schematic below, assume D1 and D2 are silicon with forward voltages of 0.7V. Find the following (with solutions) a) Conditions required wherein none of the diodes are conducting b) If both diodes are not conduction, what is Vo? Express in terms of Vi c) Plot the overall relationship of Vo and Vi in the coordinate system shown below. Remember, you are to plot the transfer characteristics of the circuit.
- Given the schematic below, assume D1 and D2 are silicon with forward voltages of 0.7V. Find the following (with solutions) 1) What input conditions or what value of Vi will allow D1 to conduct? 2) If D1 is conducting, what is V0? Express V0 in terms of Vi 3) Under what conditions will D2 conduct? 4) If D2 is conduciton, what is V0? Express V0 in terms of ViApply each of diode approximations given the following parameters D`:rB= 2 ohms, rR= 220 kilohms: Si, rB = 5 ohms, rR= 560 kilo ohms Determine the current flowing through D1, D2 AND R2, R3, THE VOLTAGE ACROSS R3 SOLVE IN THREE DIODE APRROXIMATIONSA conductor carries a current that may be regarded as equivalent to the sum of two components, one of them being a continuous direct current of 4.2 amp and the other a superimposed full-wave rectifier current. If the latter has a maximum value of 6.4 amp, calculate the average current in the wire if (a) both components have the same direction, (b) the two components are oppositely directed?
- A conductor carries a current that maybe regarded as equivalent to the sum of two components, one of them being a continuous direct current of 4.2 amp and the other a superimposed half-wave rectifier current. If the latter has a maximum value of 8.3 amp, calculate the average current in the wire if (a) both components have the same direction, (b) the two components are oppositely directed?A semiconductor substrate of 1 mm2 cross section is used to design a resistor. The doped-p concentration is 5'10^16 at/cm^3. and μp=500cm^2/Vxs We ask:(a) Calculate the electrical resistance for dimensions a= 100 mm, l= 500 mm, e= 0.1 mm.(b) The current density circulating for a voltage of 5 V.(c) The dopant concentration for R= 100 W.Exercise 3: In the circuit of figure below, the diode is assumed to be perfect. The transformer secondary has zero resistance and delivers voltage ve(t)= V msin wt. 1. Draw the waveform of vs(t) when the capacitor is disconnected. 2. The capacitor being switched on, we assume that the start of the charge is at time t = 0. a. Give the expression of the current i(t); we will then suppose x(t) = wt b. Determine the angle x1(t) = wt, of the end of conduction of the diode. 3. When the diode has stopped conducting, what is the equivalent circuit in figure below? Write the differential equation governing this circuit. Give its general solution. Deduce the expression of vs(t) for the discharge phase of the capacitor. 4. Write the mathematical condition corresponding to the angle x2(t) = wt2 end of discharge of the capacitor. 5. Deduce the approximate waveform from the filtered voltage Vs(t).
- Design the network of below to maintain V L at 12 V for a load variation (I L) from 0 mA to 200 mA. That is, determine R S and V Z. Determine P Z max for the Zener diode of part (a).When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What is the value of the metal work function?. a) Calculate and plot the current flowing through the pn junctions of device #2 on your 3311 wafer as a function of voltage over the range of -3 volts to plus 1.5 (or so) volts on a linear scale. b) plot the I-V curve for the forward voltage on a log scale. c) What voltages correspond to 10 A/cm2, 100 A/cm2, 1000 A/cm2, 10,000 A/cm2 and 100,000 A/cm2? d) What is the current and current density when the applied voltage is equal to the built-in voltage? e) what are your thoughts on applying a voltage greater than the built-in voltage to a pn junction diode?