KUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=1016 cm-3. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20eV below the conduction band edge. [Take NC=2.8 x 1019cm³].
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- Identify 2 elements that would lead to a p-type semiconductor when added in trace amounts to germanium. Explain your response.Would you prefer to capture Tantalum carbide resistance composite or chemical for beryllium surface mirrors for the James Webb spacecraft?At room temperature (i.e., 300 K), a semiconductor made of gallium arsenide (GaAs) has an intrinsic electron concentration (ni) of 1.8×10^6 cm^-3 , an electron mobility (μe) of 8500 cm^2 V^1 s^-1 , and a hole mobility (μh) of 400 cm^2 V^-1 s^-1 . \ (a) Calculate the intrinsic electric conductivity and resistivity of GaAs at 300 K. (b) When GaAs is doped with an ionized donor concentration of 10^15 cm^-3 , where is the Fermi level? Calculate the electric conductivity of the doped GaAs. (c) If the semiconductor sample discussed in (b) is further doped with an ionized acceptor concentration of 9×10^14 cm^-3 , what is the free hole concentration and electric conductivity of the sample?
- Which of the following can be used to introduce impurity into a silicon wafer to control the resistivity of surface layers? A. thermal oxidation B. lon implantation C. photolithography D. thermal diffusion Explain your answer!Question No. 3 a) Calculate the degree of Polymerization when an average molecular weight of a Polymer is 23040g/mol, having monomer of C8H8O4. b) Calculate the Degree of Crystallinity of the composite having mineral particles of 15(%) by weighthas enthalpy of melting of 31.3 (J/g) and enthalpy of crystallization of 24.4 (J/g). if, Δhm100 = 90(J/g). The Specific gravity of the matrix and particles is 1.24 and 2.2 respectively.Determine the repeat distance, linear density, and packing fraction for BCC lithium, which has a lattice parameter of 0.35089 nm, in the [100] , [110] [111] , and directions. Which of these directions is close packed?
- Zinc is to be used as an internal standard for the polarographic analysis of thallium. A standard solution containing twice the concentration of zinc as Thallium has a diffusion current of 1.89 µA for Ti and 3.50 µA for Zn. A 10.0g alloy was dissolved in 500 mL, 25 mL of this solution was mixed with 25 mL of 1.0 x 10-3 M Zn 2+ solution. The diffusion currents of this final solution are 18.2µA for Tl+ and 14.5µA for Zn+. Calculate % Ti in the sample analysedA device to understand how iron behaves at high temperatureswe want to design. This device (with 1% accuracy) allows the change in volume (heating) of a 1cm 3 iron cube.the resulting polymorphic transformation) must be able to feel. HMK structure in iron 911 0 C and latticeparameter 0.2863 nm. At 913 0 C, it has YMK structure and its lattice parameter is 0.3591 nm. Of measuring instrumentDetermine the accuracy tolerance it needs (i.e. at least how many cm 3 to detect a changemust). It is necessary to use at least 6 digits after the comma in this question. Hint: YMK first andFor HMK, the volume of an atom is found and then, using the number of atoms in each structure, the ironThe question can be started by finding the different volumes.The addition of dimethylglyoxime, H2C4H602N2, to a solution containing nickel(Il) ion gives rise to a precipitate: Nickel dimethylglyoxime is a bulky precipitate that is inconvenient to manipulate in amounts greater than 135 mg. The amount of nickel in a type of permanent-magnet alloy ranges between 22% and 38%. Calculate the sample size that should not be exceeded when analyzing these alloys for nickel.
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