Q2/ A step pn junction in Si at T 300 K. At zero bias, only 20% of the total depletion region width is on the p-side. The built-in potential is V-1.50V. Determine the shallow acceptor level on the p-side, Na.... Solution: X, -0.2 Xw

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Q2/ A step pn junction in Si at T 300 K. At zero bias, only 20% of the total
depletion region width is on the p-side. The built-in potential is V=1.50V.
Determine the shallow acceptor level on the p-side, Na....
Solution: X, =0.2 Xw
Transcribed Image Text:Q2/ A step pn junction in Si at T 300 K. At zero bias, only 20% of the total depletion region width is on the p-side. The built-in potential is V=1.50V. Determine the shallow acceptor level on the p-side, Na.... Solution: X, =0.2 Xw
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