Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? Hp = 250- cm-2 and %3D sa n = 1.5 x 1010cm-3 %3D (Ans. 2.25 x 10 cm-3,0.252.cm).

Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? Hp = 250- cm-2 and %3D sa n = 1.5 x 1010cm-3 %3D (Ans. 2.25 x 10 cm-3,0.252.cm).

Principles of Instrumental Analysis

7th Edition

ISBN:9781305577213

Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Chapter2: Electrical Components And Circuits

Section: Chapter Questions

Problem 2.14QAP

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Question

Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron
concentration (n) at 300 k?. What is the resistivity? H, = 250-
n = 1.5 x 101°cm-3
-2
and
V.S
(Ans. 2.25 x 10 cm-3,0.250.cm).

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