Q3. Consider an n-type silicon photoconductor which is 0.1 cm long, 1µmthick and 50 umwide. If the incident photon flux Do=1016cm-2s-1on its top surface and the absorption coefficient a=5x104cm-1, čalculate the stead photocurrent when a 5 V supply is applied across the longitudinal dimension of the sample. Assume that µn=1200cm2V-s, µp=450cm2V-sand Tn=Tp=2x10-7s

Q3. Consider an n-type silicon photoconductor which is 0.1 cm long, 1µmthick and 50 umwide. If the incident photon flux Do=1016cm-2s-1on its top surface and the absorption coefficient a=5x104cm-1, čalculate the stead photocurrent when a 5 V supply is applied across the longitudinal dimension of the sample. Assume that µn=1200cm2V-s, µp=450cm2V-sand Tn=Tp=2x10-7s

Inquiry into Physics

8th Edition

ISBN:9781337515863

Author:Ostdiek

Publisher:Ostdiek

Chapter10: Atomic Physics

Section: Chapter Questions

Problem 35Q

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Concept explainers

Compton effect

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The amount of backward thrust or force experienced by a person when he/she shoots a gun in the forward direction is called recoil velocity. This phenomenon always follows the law of conservation of linear momentum.

Question

Q3. Consider an n-type silicon photoconductor which is 0.1 cm
long, 1µmthick and 50 umwide. If the incident photon flux
Do=1016cm-2s-1on its top surface and the absorption
coefficient a=5x104cm-1, čalculate the stead photocurrent
when a 5 V supply is applied across the longitudinal dimension
of the sample. Assume that pn=1200cm2V-s, µp=450cm2V-sand
Tn=Tp=2x10-7s

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