Problems Q1: A bar of intrinsic silicon having a cross section area of 3x10 m² has an n=1.5x10m³. If µ=0.14 m/V.s and Hp-0.05 m/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm)

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Q1: A bar of intrinsic silicon having a cross section area of 3x10 m² has
an n=1.5x10"m. If H.=0.14 m²/V.s and Hp-0.05 m/V.s. Find the long
of the bar if the current is 1.2mA and the applied voltage is 9V.
(Ans: 1.026mm)
Q2: Calculate the thermal equilibrium electron and hole concentration in
silicon at T=300K for the case when the Fermi energy level is 0.22 eV
below the conduction band energy. E= 1.12 eV. The values of Ne and N,
are 2.8x1025/m and 1.04x1025/m2, respectively.
(Ans: n=5.73x10²/m', p=8.43x10%/m)
Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b)
T=400K. The values of N, and N, are 2.8x1025/m2 and 1.04x1025/m2,
respectively.
(Ans: (a) 7.68x10/m², (b) 2.38×10/m³)
Q4: Determine the position of the intrinsic Fermi level with respect to the
center of the bandgap in GaAs at T=300K. m,"=0.067 mo, m,=0.48 mo
(Ans: -38.2meV)
Transcribed Image Text:Problems Q1: A bar of intrinsic silicon having a cross section area of 3x10 m² has an n=1.5x10"m. If H.=0.14 m²/V.s and Hp-0.05 m/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. E= 1.12 eV. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m2, respectively. (Ans: n=5.73x10²/m', p=8.43x10%/m) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of N, and N, are 2.8x1025/m2 and 1.04x1025/m2, respectively. (Ans: (a) 7.68x10/m², (b) 2.38×10/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. m,"=0.067 mo, m,=0.48 mo (Ans: -38.2meV)
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