same p and n side doping of a p-n junction diode at T = 300 K, for Ge and GaAs, which one has higher built-in reverse electric field at zero bias?
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For same p and n side doping of a p-n junction diode at T = 300 K, for Ge and GaAs, which one has higher built-in reverse electric field at zero bias?
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- (b) For same p and n side doping of a p-n junction diode at T = 300 K, for Ge aad GaAs, whichone has higher built-in reverse electric field at zero bias? (hint: reverse electric field is created inthe depletion region of diode and opposes current flow).For a specially designing on junction diode, the value of the forward current is 35 mA at a forward voltage of 3 V. If the eta of the material of the diode is 1.5, then estimate the reverse saturation current.Estimate the amount of free electrons and holes in a N-doped Silicon wafer a) at room temperature with 1014 cm-3 doping level, and b) at 650K with 1015 cm-3 doping level
- 1.)A 4 layer diode was biased in the forward blocking region having 55v composed the anode + cathode. What will be the anode current under this bias condition if the resistance of diode in formed blocking region is 10,00 ohms?Calculate the built in potential for a silicon pn junction diode at 300 K with the given doping densities: NA=2x1016/cm3 and ND=5x1015/cm3. Assume the intrinsic carrier concentration (ni) of Si as 1.5x1010/cm3.A silicon diode has a forward current (IF) of 8.2 mA and a bulk resistance (RB) of 5Q. What is the value of diode forward voltage VF?
- A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AA 0.5 W zener diode is rated to have VzT = 4 V at a test current of IzT =11.0 mA. Its incremental resistance r, = 68.0 Ohms. What voltage will result when conducting a reverse current of Iz = 21 mA? What is the maximum safe current, using the linearized model and including the effect of rz?Calculate the power rating of a zener diode connected across load working in reverse biased condition when the breakdown occurs at the current twice the test current, where VZ = 30 V, VZK =28.5V, IZK= 2mA, IZ= 10mA . Also calculate the minimum load resistance value with input voltage at Vs= 60 V and series resistance 450ohms.
- The diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)Given a silicon diode current of 6mA and reverse current 1nA, find the forward diode voltage VD in volts.For a silicon pn junction under forward biased condition, the reverse saturation current is 10 nA. If the value of the forward voltage across the diode is 0.5 V and the observation is being made at 300 K, then what will be the value of the diode current?