A) Determine potential barrier, 1) If the resistivity of the P-type and N-type of a silicone diode are 82-cm and 52-cm respectively. 2) If the doping densities of both P-region and N-region are tripled. Given that 1.6 x 10-1°C, nF1.5 x 101%cm 4= 500 cm²V"'s", lh= 1300 cm²V's 'and VT = 0.026 V at 300 K°.

Power System Analysis and Design (MindTap Course List)
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ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
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Chapter4: Transmission Line Parameters
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Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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A) Determine potential barrier, 1) If the resistivity of the P-type and N-type of a silicone diode are
82-cm and 52-cm respectively. 2) If the doping densities of both P-region and N-region are tripled.
Given that 1.6 x 10-1°C, nF1.5 x 101/cm 4= 500 cm²V"'s", lh= 1300 cm²V's 'and VT = 0.026 V at
300 K°.
Transcribed Image Text:A) Determine potential barrier, 1) If the resistivity of the P-type and N-type of a silicone diode are 82-cm and 52-cm respectively. 2) If the doping densities of both P-region and N-region are tripled. Given that 1.6 x 10-1°C, nF1.5 x 101/cm 4= 500 cm²V"'s", lh= 1300 cm²V's 'and VT = 0.026 V at 300 K°.
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