Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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The ld - Vd characteristics of an NMOSFET are shown in Fig. 6—48 What are the velocities of the electrons near the drain and near the source at points A, S. and C? Use the following numbers in your calculations:
A single measurement indicates the emitter voltage of the transistor in the circuit of Fig. P6.56 to be 1.0 V. Under the assumption that |VBE| = 0.7 V, what are VB, IB, IE, IC, VC, β, and α ?
6b.
The transistor consists of three terminals. The main reason for designing configurations is that it requires four terminals in order to provide the input and the output connections of the circuit for effective amplification.
Now in your own words describe how Bipolar Transistors Transistor ( BJT ) various configurations are designed with relating diagrams.
In your own estimation evalute which one is most widely used when looking at appreciable output for an amplifier?
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- A copper bus bar has a rectangular cross-section of dimensions 3 in by 6 in. Determine the cross-sectional area in MCM.arrow_forwardAn N-MOSFET and a P-MOSFET are fabricated with substrate doping concentration of 6 x 1017cm-3 (P-type substrate for N-MOSFET and N-type substrate for P-MOSFET). The gate oxide thickness is 5 nm. See Fig. 6-39. (a) Find Vt of the N-MOSFET when N+ poly-Si is used to fabricate the gate electrode. (b) Find Vt of the P-MOSFET when N+poly-Si is used to fabricate the gate electrode. (c) Find Vt of the P-MOSFET when p+ poly-Si is used to fabricate the gate electrode. (d) Assume that the only two voltages available on the chip are the supply voltage V dd = 2.5 V and groWld. 0 V. What voltages should be applied to each of the tenninals (body, source, drain. and gate) to maximize the source-to-drain current of the N-MOSFET? (e) Repeat part (d) for P-MOSFET. (f) Which of the two transistors (b) or (c) is going to have a higher saturation current. Assuming that the supply voltage is 2.5 V, find the ratio of the saturation current of transistor (c) to that of transistor (b). (g) What is…arrow_forward(a) An n-channel MOSFET has a mobility of 600 cm2/V · s and a channel length of 1 μm. What is the transistor’s fT if VGS − VT N = 0.25 V. (b) Repeat for a PMOS device with a mobility of 250 cm2/V · s. (c) Repeat for transistors in a new technology with L = 0.1 μm. (d) Repeat for transistors in a technology with L = 25 nm.arrow_forward
- 6. The current flowing into the collector lead of a certain bipolar junctiontransistor (BJT) is measured to be 1 nA. If no charge was transferred in or outof the collector lead prior to t = 0, and the current flows for 1 min, calculatethe total charge which crosses into the collector.arrow_forwardThe current flowing into the collector lead of a certain bipolar junction transistor (BJT) is measured to be 1 nA. If no charge was transferred in or out of the collector lead prior to t = 0, and the current flows for 1 min, calculate the total charge in nC which crosses into the collector.arrow_forward6.72 For the amplifier circuit in Fig. 6.33(a) with VCC = +5 V and RC = 1 k?, find VCE and the voltage gain at the following dc collector bias currents: 0.5 mA, 1 mA, 2.5 mA, 4 mA, and 4.5 mA. For each, give the maximum possible positive and negative output signal swing as determined by the need to keep the transistor in the active region. Present your results in a table.arrow_forward
- For the circuits in Fig. P6.61, find values for the labeled node voltages and Branch currents. Assume to be very high.arrow_forward1. Consider a common emitter amplifier. If the collector current at saturation is 10 mA and the cutoff voltage is 9V, what should be the coordinates of the operating point for: a) Class A amplifier b) Class B amplifier Please show the complete solution. Thank you !arrow_forwardIn the circuit shown in Fig. P6.58, the transistor has β =50. Find the values of VB, VE, and VC, and verify that the transistor is operating in the active mode. What is the largest value that RC can have while the transistor remains in the active mode?arrow_forward
- A MOSFET has a channel length of 1μm. What value of VDS will cause the electrons to reach saturation velocity? Repeat for a channel length of 0.1 μm. Repeat for L = 22 nmarrow_forwardA threshold-adjusting implant is used to give a room-temperature threshold voltage of 0.25 V for the MOS transistor with a P-type substrate threshold voltage of -0.287 and Cox=6.906x10-8F/cm2. Calculate the implant dose required and state clearly which species should be implanted.arrow_forwardThe steady state operation of a transistor depends a great deal on its base current, collector voltage, and collector current values and therefore, if the transistor is to operate correctly as a linear amplifier, it must be properly biased. In your level of understanding, explain how important biasing transistor in a given working electronic Circuit is. Explain also the consequence when such transistor does not biases properlyarrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License