IOT555_Addendum

1) what is the Voltage & Current rating ofTriode for Alternating Current (TRIAC)  2) 5. Are the following statements correct or wrong? Justify your answer.(a) Thyristors are used only for low voltage, low current applications.(b) MOSFETs are used for high frequency applications.(c) BJT is more efficient than IGBT in high power applications.(d) GTO requires very low current applied to its gate to be turn off.(e) IGBT is a voltage driven device.

Apart from the variations in the process parameters, different portions of the design may also see different power supply voltage and temperature. All these differences can arise due to, (i) IR drop variation (ii) Voltage threshold variation of PMOS or NMOS device (iii) Channel length variation (iv) Interconnect metal etch or thickness variations A. i and ii B. i and iii C. ii and iv D. All of above

When solving FET circuit analysis, mathematical method and graphical method can be used, 1. Compare the two methods in terms of their advantage and disadvantage

The ______ terminal of the JFET is the equivalent of the Collector terminal of a BJT. a.Drain b.Source c.None of these d.Gate

A HVDC link is operating with 175 KV AC line voltage at the rectifier. When the DC current is 1100 Amps, the rectifier delay angle is 100 and inverter extinction angle is 200. The resistance of the line is 23 ohms and the commutating reactances of the rectifier and inverter are 22 ohms and 21 ohms. Calculate the DC voltages at the rectifier and inverter terminals and the AC line voltage at the inverter.

Q) TTR 300 , What is the basic working principle of the device ?

1. Why are solar concentrators used in solar cells? 2. Why do you use Proviskit cells in construction? 3. Why is pure silicone grafted? 4. Why without inverters are no real value solar panels? 5. Why, through the current and voltage characteristics curve, can the cell efficiency be known? 6. Why was phosphorus chosen as a doping element for silicon?

pls solve in less than 30 min. pls fast

Power electronic

Q2. A single -phase full-bridge inverter is operated from a 48 V battery and is supplying power to a pure resistive load of 10 ohm. Calculate Fundamental component of the output voltage waveform First five harmonics of the output voltage waveform RMS value of the output voltage and output fundamental power i. ii. ii. Rating of SCR Verify the RMS value determined by harmonic summation method is nearly equal to the iv. v. value determined by integration method

• Discussion: • How many states the PN sequence generator of DB20 have? • What is the length of PN sequence generator of DB20? • Calculate the outputs of each clock and put them on the Table (2). • What is the PN Sequence of the DB20. • Verify the outputs you get with the outputs from the device.

Q1- For single phase voltage source bridge inverter: 1- Draw the circuit. 2- With R=102 , L=50mH, frequency is 50 Hz , supply voltage is 450V and quasi-square wave output and a 50 percent on time, draw the waveforms of output voltage (VL.) and load current (iL) when I=25.05A , Io= -9.217A. 3- Calculate the RMS value of output voltage and mean output power.

The ______ terminal of the JFET is the equivalent of the base terminal of a BJT. a.Gate b.Source c.Drain d.None of these

--- -- ----- Q9. Determine the mode of operation of a NMOS transistor when its terminal voltages are VGS = 3V, VDs = 1V, and VT = 1V? —-— OFF com_ Saturation Linear G D S

Q9. Using square wave control technique for three phase inverter and 180° triggering mode, if the supply voltage is 200 V DC and pure resistive load, then the maximum value of Van is O 200 V O 133.33 V O 66.67 V O 400 V

ECE 520 - VLSI Design (spring 2024) 1. Due in class: Thursday March 28, 2024 Homework #7 Consider the low swing driver of Figure 1, and assume that Vtn0=0.4V, Vtp0=-0.5V. a. What is the voltage swing on the output node (Vout)? Assume y=0. b. Estimate (i) the energy drawn from the supply and (ii) energy dissipated for a OV to 2.5V transition at the input. Assume that the rise and fall times at the input are 0. Repeat the analysis for a 2.5V to 0V transition at the input. c. Compute tpLH (i.e. the time to transition from VOL to (VOH + VOL) /2). Assume the input rise time to be 0. VOL is the output voltage with the input at OV and VOH is the output voltage with the input at 2.5V. Assume that K'n=100uA/V². d. Compute Voн taking into account body effect. Assume y = 0.4V 1/2 and 20F 0.6V for both NMOS and PMOS. VDD 2.5 V = (M)-15μm 'n 'P == 1.5 um 0.25 μm 3 um 0.25 μm in out 2.5V OV CL=150fF Figure 1 Low Swing Driver

This question would help revise concepts related to MOS device and basic circuit design. Please mark all correct answers to the following multiple choice questions. 1.1. Which of the following are true about MOSFET devices? (a) MOS stands for "Metallurgy Of Semiconductors" (b) MOSFET current conduction is due to drift phenomenon (c) An externally induced voltage at the gate is fundamental to inversion layer (d) Naming of "Source" and "Drain" regions are only dependent on aspect ratio 1.2. Which of the following are true about NMOS transistors (a) The threshold voltage can be positive or negative depending on geometry (b) Channel length modulation parameter (A) is always positive (c) Current flows from drain to source (d) Threshold voltage is a fixed value based on process, it cannot be changed by external voltages 1.3. In a MOS device (a) Cas and CGp both have both geometry and voltage dependencies (b) Cas is takes minimum value at saturation while CGD goes to maximum value (c) CoB and…

Explain the concept of Moore's Law and its impact on the microchip industry. Discuss the limitations and potential alternatives to sustaining the continuous increase in transistor density.

1. Explain the I-V characteristics of the BJTS (IC-VCE) and MOSFETS (ID-VDs) by explaining the working mode of the devices on the I-V curves.

Q2. A) Draw circuit diagram and output voltage waveform of three phase inverter (120- degree condition) has Y-connected resistive load B) What are the main differences between VSI and CSI the multiple choice list for each question

pls show the complete solution for the following and write legibly

Q4): Using minimum numbers of ICs 74LS90 programmable counter to design MOD-40 asynchronous counter.

4) A single phase full bridge inverter will be used to generate 50 Hz square wave voltage. Inverter the input voltage is 400 V and the load consists of inductance and resistance connected in series. (R=10Ω, L=31.83 mH) a) Draw the circuit b) Plot the load current, showing the load voltage and semiconductor currents. c) Load voltage is effective calculate the value d) Calculate the effective value of the main harmonic of the load current. e) Calculate the average load current. f) Find the THD of the load voltage

Instruction: Show complete solution. Use at least two decimal places. Express your answer in engineering notation. Determine the voltage and current operating values for the following BJT bias circuits and draw the DC load line. 3. Determine the following parameters below and draw the DC load line. a. Ic +20 V b. IE C. VCE d. VCE(cutoff) 2 ΚΩ e. Ic(sat) 430 ΚΩ Vi 10 μF 카 www 10 µF HH B = 50 HH '1kΩ = 40 με Vo

single phase half bridge inverter has load r=2ohm and dc souuce voltage vs/2=115v . calculate THD and HF

A three phase bridge inverter is fed from a 500 V dc source. The inverter is operated in 180° conduction mode and it is supplying a purely resistive, star – connected load. The RMS value of the output (line) voltage is O 450 V O 259.80 V O 408 V 235.56 V

1. Moore's Law: 1) What is Moore's Law about? 2) Why we have been used Moore's law to predict computer performance before multicore? 3) What limits the performance scaling based on Moore's law

Discuss about! Depletion Type MOSFET Construction Systematic Diagrams Working Applications

find the answer in less than 30 min pls.