Lab 6 Report

Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]

A. A voltage regulator circuit provides a constant voltage of (6 V) across a load resistance of (2 k2) using (12v) source voltage. Assume the maximum and the minimum current required for the Zener operation is (5 mA and 15 mA) respectively. 1. Design and draw the schematic diagram of the circuit. 2. What is the maximum values of the source voltage? 3. At maximum source voltage, what is the minimum load resistance to maintain the circuit operates normally?

Determine the VDS and the drain current for the E-MOSFET circuit shown. The data sheet for this particular MOSFET gives ID(ON)=500 mA at VGS=10 V and VGS(th)=1 V.

This multiple choice questions from electronics lab. The name of experiment is using the multimeter to test transistor diode junction

Q2-B) For enhancement MOSFET. If VGs = 7.5V and Vcs(th) = 5.0V, and ID = 5.0mA, determine the K values of the MOSFET and determine the drain current if VGs=6.19V ?

Pictorially describe the fabrication steps of N-channel E MOSFET. The drawing and steps be in more details

determine the voltage of load regulation for the circuit.

For the MOSFET shown in Figure Q2d, VGs (off) = -6V, IDss = 10.5 mA and Vps = 11V. Determine, d) i) What is the type of MOSFET and the amplifier configuration? ii) What is the value of the drain resistance, Rp? 15V VDD RD Q1 LRG 9MO Figure Q2d

Question 3: A 2N6755 Harris n-channel MOSFET has a de supply voltage of 60-V, and a load resistance of 6-2. With a gate-source voltage of 10-V, the on-state resistance is 0.2-2. (a) Assuming that the MOSFET is acting as a simple on-off switch, determine the load power and efficiency. (b) The MOSFET above is now used in a 20-kHz chopper circuit. Assuming the parameters remain unchanged, calculate the load power and efficiency at a chopper duty cycle of 0.4.

a. A 220 ohms resistor is connected in series with the gate of an SCR using basic circuit in figure. The gate current required to fire the SCR is 10mA.What is the input voltage (Vin) is necessary to switch on the SCR?

04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)

In the following circuit, the nMOS has a threshold voltage of Vr = 1.0 Vand K = 2 mA/VÅlso given that R1 = 3 kNVpp identical with vp. = 0.9(i.e. use CVD model for the diodes). Our task is to set the value of Rp such that the MOSFET will be operating at the edge of saturation. What's edge of saturation? We know in the triode region vps vGs – VrHence, the edge of saturation means when vps = vGS - VAt this mode, both the equations for In in saturation mode and triode mode would give the exact 6 Vand the diodes are same result, VDD VDD Rp R1 KIKKH

• In MOSFET, it is the foundation upon which the device will be constructed and is formed from a silicon base A. Substrate, B. Slab, C. Source, D. Base.

In FETs: The value of the current IDSS is Select one: a. the midpoint drain current b. the maximum possible drain current c. the drain current at cutoff d. the drain current with the source shorted

Q3. Multiple Choice question based of Field Effect Transistor a. The Drain current for JFET with a Pinch off voltage Vp-3volts and Drain Source Saturation Current Idss-6mA is given a bias of VGS=+1 volt is- a) 1.07mA b) 10.7mA

Q2: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW'. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. 3

For the circuit in the figure below, determine the equations for IC3 and IC4 in terms of VCC, β, and Rref. Consider that the transistors are conducting with VBE ~ 0.6 and that β > 100.

An n-type MOSFET has a turn-on voltage of VTO=0.6V and is operated at a gate-source voltage of 1V. The drain-source voltage is also 1V. In what region is the MOSFET operating? a. Saturation region b. None of the above c. Triode region O d. Ohmic region

Figure Q4 shows an NMOS common source circuit. Given that VTN = 1 V, and Kn = 0.1 mA/V2a) Calculate iD and vDS.b) Find the power dissipated in the transistor.

Draw the IV graph for a MOSFET in deletion mode, with a drain source current of 1.2 mA. Indicate this value on the graph

- Explain the effect of base resistance and collector resistance on the circuit.

2. We discussed in class how the channel capacitance can be modeled in different region of operations in MOSFETs. For your reference, the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region? Channel Capacitances Channel capacitance is a voltage dependent and non-linear capacitance S C P-sub Bulk Cutoff Region D Operation Region Cutoff Linear Saturation S P-sub Bulk C Linear Region CGBCH CoxWLeff 0 0 1 2 3 S P-sub Bulk Saturation Region CGSCH 0 сат CoxWL eff 1 2 CGDCH 0 CoxWLoft CoxWLoff eff D 0

Field-effect transistors (FETs) exhibit ........... regions between the oppositely-doped gate and channel sections * Your answer

Using one NPN transistor, one PNP transistor, one general purpose diode, one LED and two resistors, design a constant current source that drives a constant current of 20 mA through the LED. The circuit is supplied with 10V from an ideal voltage source. The general purpose diode cannot handle more than 10 mA. You MUST use all six components given. ( Calculate the resistance of the two resistors. The transistors and the diode use Silicon (VT = 0.7V). Both transistors have B = 500.

Q5: a) In the regulator circuit of Figure ,Determine Rext if the maximum internal regulator current is to be 250 mA. b) Using a 7824 voltage regulator and a 10 2 load, how much power will the external pass transistor have to dissipate? The maximum internal regulator current is set at 500 mA by Rext- c) Show how to include current limiting in the circuit of Figure . What should the value of the limiting resistor be if the external current is to be limited to 2 A? d) Using an LM317, design a circuit that will provide a constant current of 500 mA to a load. xext 15 Vo Rext 7809 OVOUT Figure

a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field EffectTransistor with its drain characteristics.

An npn transistor has the CE input characteristics shown in Figure 3-19 (p. 115) and the CE output characteristics shown in Figure 3-20 (p. 115). (a) Find IB when VBE = 0.7 V and VCE = 20 V. (b) Find the beta of the transistor at VCE = 6.0 V and IB = 20uA (neglecting leakage). (c) Find bac for VCE = 6.0V and IB varying from 20 uA to 40 uA. (d) What is the approximate value of VCE,sat in Fig. 3-20?

1. From the circuit shown in the figure, the statement below are true except (the transistor is Si) a. transistor has a collector emitter voltage of 8.7 V b. transistor dissipates a power of 13 mW c. transistor has a base-collector voltage of -8 V d. transistor is in the active region 2. From the figure, β of the silicon transistor is 49, the base current is equal toa. 1.274 mAb. 0 Ac. 26 μAd. 1.3 mA

Transistor Bias Circuits with detailed explanation of Voltage Divider bias(Explain loading effect of voltage divider bias and Thevenin theorem applied to voltage divider bias). Give brief explanation and calculation of other bias methods

A 4.7 zener diode is connected to the base resistor. The left side of the resistor sits at about 12V. The right side of the biasing resistor is connected to the Zener and npn transistor. The Zener bias is 5mA. The base current needed is 80uA. What is the appropriate resistor for this circuit? (In kohms) I

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VDD = 16V, VGG = -3V, RG = 1.2 M-ohm, RD = 2200ohm, IDSS = 10mA, VP=-4.5Va)Determine the drain current ID in mA.b)Determine the gate voltage, VGc)Determine the source terminal voltage, VSd)Determine the gate-to-source voltage, VGSe)Calculate the drain terminal voltage, VDf)Determine the drain-to-source voltage, VDS

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