Tutorial3

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University of Guelph *

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3450

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English

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Oct 30, 2023

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9

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ENGG*3450 /Tutorial-3 / week 8 (Oct. 23–27) 3.9- Find the length of a silicon bar having a 5 μm × 4 μm cross section and having free-electron and hole densities of 10 4 /cm 3 and 10 16 /cm 3 , respectively, so that 0.2 mA current flows when 1 V is applied end- to-end. Use μ ? = 1200 cm 2 /V ⋅ s and μ ? = 500 cm 2 / V ⋅ s .
ENGG*3450 /Tutorial-3/ week 8 (Oct. 23–27) 4.8- Assuming that the diodes in the circuits of Figures are ideal, utilize Thévenin's theorem to simplify the circuits and thus find the values of the labeled currents and voltages.
ENGG*3450 /Tutorial-3 / week 8 (Oct. 23–27) 5.4- An NMOS transistor that is operated with a small ν 𝐷𝑆 is found to exhibit a resistance r 𝐷𝑆 . By what factor will r 𝐷𝑆 change in each of the following situations? (a) ν 𝑂? is doubled. (b) The device is replaced with another fabricated in the same technology but with double the width. (c) The device is replaced with another fabricated in the same technology but with both the width and length doubled. (d) The device is replaced with another fabricated in a more advanced technology for which the oxide thickness is halved and similarly for ? and 𝐿 (assume μ ? remains unchanged).
ENGG*3450 /Tutorial-3 / week 8 (Oct. 23–27) 5.14- Consider an ? -channel MOSFET with t ?𝑥 = 4 nm , μ ? = 450 𝑐? 2 /? ⋅ 𝑠 , V 𝑡 = 0.5 ? , and ?/𝐿 = 10 . Find the drain current in the following cases: (a) ? 𝐺𝑆 = 1.8 ? and ? 𝐷𝑆 = 1 ? (b) ? 𝐺𝑆 = 0.7 ? and ? 𝐷𝑆 = 1.5 ? (c) ? 𝐺𝑆 = 1.8 ? and ? 𝐷𝑆 = 0.1 ? (d) ? 𝐺𝑆 = ? 𝐷𝑆 = 1.8 ?
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