1. The Fermi level in n-type silicon at for T = 300 K is 245 m eV below the conduction band and200 m eV below the donor level. Determine the probability of finding an electron (a) in the donorlevel and (b) in a state in the conduction-band k„T above the conduction-band edge.2. A particular semiconductor material is doped at Na = 2 x 1014 cm-3 and Na = 1.2 x 1014cm-3. The thermal equilibrium electron concentration is found to be no = 1.1 x 1014 cm-3.Assuming complete ionization, determine the intrinsic carrier concentration and the thermalequilibrium hole concentration.

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1. The Fermi level in n-type silicon at for T = 300 K is 245 m eV below the conduction band and 200 m eV below the donor level. Determine the probability of finding an electron (a) in the donor level and (b) in a state in the conduction-band k„T above the conduction-band edge.

1. The Fermi level in n-type silicon at for T = 300 K is 245 m eV below the conduction band and 200 m eV below the donor level. Determine the probability of finding an electron (a) in the donor level and (b) in a state in the conduction-band k„T above the conduction-band edge.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

1. The Fermi level in n-type silicon at for T = 300 K is 245 m eV below the conduction band and
200 m eV below the donor level. Determine the probability of finding an electron (a) in the donor
level and (b) in a state in the conduction-band k„T above the conduction-band edge.
2. A particular semiconductor material is doped at Na = 2 x 1014 cm-3 and Na = 1.2 x 1014
cm-3. The thermal equilibrium electron concentration is found to be no = 1.1 x 1014 cm-3.
Assuming complete ionization, determine the intrinsic carrier concentration and the thermal
equilibrium hole concentration.

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