6) You work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a) calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of this material. 30 ст 2 ст 1 cm
6) You work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a) calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of this material. 30 ст 2 ст 1 cm
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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