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An Si abrupt p-n junction is doped with N¸=10" cm³ onp-side and N, = 5x10" on n-side. Find the penetration of transition region into n-side at equilibrium (300 K). (a) 0.455 µm (b) 0.00227 µm (c) 0.227 µm (d) 0.00455 µm

An Si abrupt p-n junction is doped with N¸=10" cm³ onp-side and N, = 5x10" on n-side. Find the penetration of transition region into n-side at equilibrium (300 K). (a) 0.455 µm (b) 0.00227 µm (c) 0.227 µm (d) 0.00455 µm

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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An Si abrupt p-n junction is doped with N_ = 10'" cm³ on p-side and N,=5x10" on n-side. Find the penetration of transition region into n-side at equilibrium (300 K). (a) 0.455 µm (b) 0.00227 µm ( c) 0.227 μη (d) 0.00455 um
Transcribed Image Text:An Si abrupt p-n junction is doped with N_ = 10'" cm³ on p-side and N,=5x10" on n-side. Find the penetration of transition region into n-side at equilibrium (300 K). (a) 0.455 µm (b) 0.00227 µm ( c) 0.227 μη (d) 0.00455 um
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