(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density ofa given copper sample are 1.28 x 10-10 m and 8.98 x 10' kg/m' respectively, carry out the following:(i)Calculate the mass of the copper sample. Take Avogadro's number, NA = 6.023 x 1023atoms/mole.If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angleat which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength1.52 x 10-10 m is used for the analysis.(ii)

In a FCC crystal structure, there is 1/8th of an atom at every corner of the unit cell, which makes…

Answered: (b) Copper crystallises as FCC (face…

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter10: Statistical Physics

Section: Chapter Questions

Problem 16P

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Similar questions

What is the probability that, at a temperature of T = 300 K, an electron will jump across the energy gap Eg (= 5.5 eV) in a diamond that has a mass equal to the mass of Earth? Use the molar mass of carbon in Appendix F; assume that in diamond there is one valence electron per carbon atom.
Assume that the total volume of a metal sample is the sumof the volume occupied by the metal ions making up the lattice andthe (separate) volume occupied by the conduction electrons. Thedensity and molar mass of sodium (a metal) are 971 kg/m3 and 23.0g/mol, respectively; assume the radius of the Na+ ion is 98.0 pm. (a)What percent of the volume of a sample of metallic sodium is occupiedby its conduction electrons? (b) Carry out the same calculationfor copper, which has density, molar mass, and ionic radius of8960 kg/m3, 63.5 g/mol, and 135 pm, respectively. (c) For which ofthese metals do you think the conduction electrons behave morelike a free-electron gas?
What mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.
Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that ni =1.5 × 1016 m-3.
Show that the moment of inertia of a diatomic molecule composed of atoms of masses mA and mB and bond length R is equal to meffR2, where meff = mAmB/(mA+mB).
In a silicon lattice, where should you look if you want to find (a) a conduction electron, (b) a valence electron, and (c) an electron associated with the 2p subshell of the isolated silicon atom?
Although an ordinary H2 molecule consists of two identical atoms, this is not the case for the molecule HD, with one atom of deuterium (Le., heavy hydrogen, 2H). Because of its small moment of inertia, the HD molecule has a relatively large value of E: 0.0057 eV. At approximately what temperature would you expect the rotational heat capacity of a gas of HD molecules to "freeze out," that is, to fall significantly below the constant value predicted by the equipartition theorem?
In a transistor circuit given determine IB, IC, IE, VCE, αdc and VBC.Neglect VBE, take β=100 1.VBB=10V,Vcc=15v,Rc=10k,Rb=1M,
Check Your Understanding If a=3+4i , what is the product a* a?
Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.
in a solid,consider the energy level lying 0.7eV below fermi level. what is the probability of this level not being occupied by an electron at the room temperature?
For silicon at T = 300 K, calculate the equilibrium electron concentration in cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.

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