I need the answer as soon as possible Calculate the drift current density in (mA/m2) for the silicon at roomtemperature. If the intrinsic carrier concentration of (2×1016electron/m³) withthe doping concentration of (3x1016atoms/m³) of the phosphorus and(2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s)and the mobility for the holes (0.05m2/V.s) and the electric field (100V/m).

First of all, we have to write down the given conditions, ni = 2×1016 electrons/m3Np = 3×1016…

Answered: Calculate the drift current density in…

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

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Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.
For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.
Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Ne=2 ×10 23 /m³, Ny= N/2).
For silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0, calculate the equilibrium hole concentration in cm^{-3}. Values within 5% error will be considered correct.
The maximum velocity of carriers in silicon is approximately 107 cm/s. (a) What is the maximum drift current density that can be supported in a region of p-type silicon with a doping of 5 × 1017/cm3? (b) Repeat for a region of n-type silicon with a doping of 4×1015/cm3?
Find the equilibrium electron and hole concentration and the location of the Fermi level for a silicon sample at27∘Cdoped uniformly with5×1015 cm−3phosphorus atoms and4×1015 cm−3boron atoms.
Calculate the density of thermionic emission current at Cs 500,1000,2000k° Question ,2 Copper have a mass density 8.95 g/cm^3 and n electrical resistivity of 1.55×10^-8ohm at room temperature. Assuming the effective mass is m0 ,calculate the conduction of electron ,the mean free time and the Fermi energy.
What mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.
Since the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit energy per unit volume at this energy level? Since the resistivity of zinc is 5.90 x 10^-8 ohm.m, calculate the average time interval between collisions of electrons.
Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that ni =1.5 × 1016 m-3.
Assume that the total volume of a metal sample is the sumof the volume occupied by the metal ions making up the lattice andthe (separate) volume occupied by the conduction electrons. Thedensity and molar mass of sodium (a metal) are 971 kg/m3 and 23.0g/mol, respectively; assume the radius of the Na+ ion is 98.0 pm. (a)What percent of the volume of a sample of metallic sodium is occupiedby its conduction electrons? (b) Carry out the same calculationfor copper, which has density, molar mass, and ionic radius of8960 kg/m3, 63.5 g/mol, and 135 pm, respectively. (c) For which ofthese metals do you think the conduction electrons behave morelike a free-electron gas?
in a solid,consider the energy level lying 0.7eV below fermi level. what is the probability of this level not being occupied by an electron at the room temperature?

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