Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. Assume the ionization energy for donors is 0.0058 eV. The fraction of total electron that are still in the donor states?
Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. Assume the ionization energy for donors is 0.0058 eV. The fraction of total electron that are still in the donor states?
Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter10: Statistical Physics
Section: Chapter Questions
Problem 16P
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