Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d= 0.05 mm w-0.5 mm and L=5 mm); Ix 0.5 mA, V-1.25 V, and Bz-6.5x10-2 Tesla, EH=-16.5 mV/cm, then the majority carrier mobility (cm2/V.S) is....

Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d= 0.05 mm w-0.5 mm and L=5 mm); Ix 0.5 mA, V-1.25 V, and Bz-6.5x10-2 Tesla, EH=-16.5 mV/cm, then the majority carrier mobility (cm2/V.S) is....

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 9P

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Question

Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters:
Geometry (d= 0.05 mm w=0.5 mm and L=5 mm); Ix =0.5 mA, V1.25 V, and Bz=6.5x10-2
Tesla, EH =-16.5 mV/cm, then the majority carrier mobility (em2/V.S) is......

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