(ii) Consider the semiconductors Ge (Eg = 0.7 eV) and GaAs (Eg = 1.4 eV) and assume that the same values of No and N, will hold as for Si (not really true !). Calculate approximate values for n; for these two semiconductors at temperatures of 80 K, 300 K and 400 K and compare to the values obtained %3D for Si at these temperatures. Also calculate the expected electrical conductivity of each of the three semiconductors at 300 K. Calculated values for ni and o: Semiconductor N; at 80 K Nj at 300K N¡ at 400 K o at 300 K Si Ge GaAs

(ii) Consider the semiconductors Ge (Eg = 0.7 eV) and GaAs (Eg = 1.4 eV) and assume that the same values of No and N, will hold as for Si (not really true !). Calculate approximate values for n; for these two semiconductors at temperatures of 80 K, 300 K and 400 K and compare to the values obtained %3D for Si at these temperatures. Also calculate the expected electrical conductivity of each of the three semiconductors at 300 K. Calculated values for ni and o: Semiconductor N; at 80 K Nj at 300K N¡ at 400 K o at 300 K Si Ge GaAs

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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