Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T-300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg 1.12 eV. The values of N, and N, are 2.8x1025/m and 1.04x1025/m2, respectively. (Ans: n=5.73x10²/m, p-8.43x10/m³)

Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T-300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg 1.12 eV. The values of N, and N, are 2.8x1025/m and 1.04x1025/m2, respectively. (Ans: n=5.73x10²/m, p-8.43x10/m³)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Q2: Calculate the thermal equilibrium electron and hole
concentration in silicon at T-300K for the case when the Fermi
energy level is 0.22 eV below the conduction band energy. Eg=
1.12 eV. The values of N, and N, are 2.8x1025/m and
1.04x1025/m, respectively.
(Ans: n=5.73x102/m³, p=8.43×10%m?)

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