Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 10, Problem 10.12P
(a)
To determine
An expression for the small signal voltage gain
Mid-band gain
Lower 3-dB frequency
(b)
To determine
The factor by which the inclusion of
(c)
To determine
To show: The inclusion of
(d)
To determine
The value of
The value of which lowers the by a factor of 10
The value of gain
The sketch of the Bode plot for the gain magnitude for both cases
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For the given circuit,
a) Find Qpoints of BJT and MOSFET transistors.
b) Find the overall small-signal voltage gain.
(BJT: VBE =0.7 V, B-100) (MOSFET: V-1.2 V, K-200μA/V², λ=0)
Vi
383K
C1
11
www
135K
www
3.9K
16.1K
Q1
C2
www
Q2
88
-8K
+5V
C3
-SV
4K
Vo
For an RC coupled transistor amplifier, the magnitude of the mid-frequency voltage gain is given as 150. Find the value of the load resistance if the following are the values of the h-parameters that represent the BJT:
1. hfe=125
2. hie=900 ohm.
hoe and hre can be neglected.
2. The following circuit shows a discrete common emitter BJT amplifier.
The BJT has B-100, Ca=5 pF, C, = 1 pF and VA-0, VT 25 mV
(1) Find DC collector current (lc), transconductance (g-), Te and re
(2) Draw small signal equivalent circuit of the amplifier in low frequency band, and determine low
comer frequency(OL) using approximation method (using time constants).
(3) Draw small signal equivalent circuit of the amplifier in high frequency band, and determine
the high coner frequency( n) using approximation method (using time constants).
VcC 9V
RC
20ka
O vout
1F
Raig
CC1
RL
20k0
20ka
RB
Vsig
CE
1MO
10F
0. 1mA
Chapter 10 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
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- Question 2. In the given common source amplifier, the signal source has a zero average and provides DC continuity to ground. The MOSFET has V; = 1 V and k, = 16 mA/V² +15 V 25 kN Cp 100 kN V sig Cs V)I= 0.5 mA -15 V a. Find the value of gm at which the device is operating. b. Find the mid-band gain V/Vsig in V/V and in dB. c. Find the value of C, that places the lower 3 dB frequency at wy = 100 rad/sec d. (Bonus Question) If Cgs = 1 pF and Cgd = 0.2 pF, find the value of the upper 3 dB frequency wH %3Darrow_forwardA common-source amplifier is fed from a signal source having a resistance Rsig = 100 kn and has a load resistance RL = 100 k2. The MOSFET has Cgs = 0.1 pF, Cgd = 50 fF, gm = 1 mA/V, and r, = 100 kO. The total capacitance between the output node and ground is C = 0.1 pF. Use the method of open-circuit time constants to obtain an estimate of the upper 3-dB frequency, fH-arrow_forward*10.48 It is required to show that the output resistance of the BJT circuit in Fig. P10.48 is given by R,= r, + [R_ || (rx + R,)] (1+ 1 +gmr. + RB To derive this expression, set V= 0, replace the BJT with its small-signal, hybrid-T model, apply a test voltage V to the collector, and find the current I, drawn from V, and hence R, as V,/I.. Note that the bias arrangement is not shown. For the case of R, S 0, find the maximum possible value for R,. Note that this theoretical maximum is obtained when R, is so large that the signal current in the emitter is nearly zero. In this case, with V, applied and V. = 0, what is the current in the base, in the g„V7 genera- tor, and in re, all in terms of I, ? Show these currents on a sketch of the equivalent circuit with R, set to ∞. R, R. V. Re Figure P10.48arrow_forward
- One of the following can produce AMa. Having the carrier value a resistanceb. Having the modulating signal vary a capacitancec. Vary the carrier frequencyd. Vary the gain of an amplifierarrow_forwardElectronics Engineering:arrow_forwardPlease Answer the following: In the circuit shown, if the transistor has V, = 1.1 V, kn = 1.3 mA/V², and Ip= 1 mA. Find gm and r. if VA = 60 V. Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. 1. 2. Find Rin and Ro. 3. Find the overall voltage gain vo/Vị. 6 V 250 k2 ovo 500 k2 Vi 1.66 k2 Rin R. 두arrow_forward
- 4arrow_forward4) Consider the amplifier shown below with its corresponding small signal model. Using the provided small signal model, perform small signal analysis to determine expressions the you would need to determine Av(s). Do NOT solve for Av(s), just provide the expressions that you would need to determine Av(s). Show your work! Do NOT make any approximations. Vin Cf Vcc www R 20 "|||||S CL Vin www R1 Cf + Vberπ Hli R gm Vbe ww ro Vo CLarrow_forwardUsing the small signal equivalent model, find the voltage gain Vo/vi of such E-MOSFET circuit. Neglect impedance due to capacitors by assuming these to be short circuit on AC analysis. Kn =4 mA/V2, and VTh = 2Varrow_forward
- The high frequency response of a BJT amplifier is affected by: . The high-frequency response of a BJT amplifier is affected by: (a) the BIT internal capacitances (b) the supply voltage (c) the coupling and bypass capacitor values (d) all of the above Select one: a. the coupling and bypass capacitor values O b. all of the above c. the BJT internal capacitances O d. the supply voltagearrow_forwardA bipolar transistor must be selected for use in a common-base amplifier with a gain of 40 dB and a bandwidth of 40 MHz. What should be the minimumspecification for the transistor’s fT ? What should be the minimum rxCμ product? (Use a factor of 5 safety margin for each estimate.)arrow_forwardProblem 2 Small-Signal Circuit Setup and Analysis Sketch and label a small-signal model for this circuit which consists of two Common Source (a) amplifiers in a cascade configuration. Assume all capacitors are large at the frequency of interest. Assume that LAMBDA= 0. (b) Derive an equation for the voltage gain defined by A, = Vou/V, R1 R3 C2 R4 R5 M1 VDD C1 Vout Vs R2 wwarrow_forward
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