Masteringphysics With Pearson Etext - Valuepack Access Card - For College Physics
10th Edition
ISBN: 9780321976932
Author: YOUNG
Publisher: PEARSON
expand_more
expand_more
format_list_bulleted
Question
Chapter 29, Problem 24P
(a)
To determine
Find the wavelength of excited photon form valence band to
(b)
To determine
What is the reason for pure diamond is transparent and colorless.
(c)
To determine
Why the impurity gem diamond are yellow color.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
The gap between valence and conduction bands in diamond is 5.47 eV.What is the maximum wavelength of a photon that can excite an electron from the top of the valence band into the conduction band? In what region of the electromagnetic spectrum does this photon lie?
Q#07: The maximum wavelength of light that a certain silicon photocell can detect is 1.11 micrometer (a) what is he energy gap (in eV) between the valence and conduction bands for this photocell (b) Explain why pure silicon is opaque.
The maximum wavelength of light that a certain silicon photocell can detect is 1.11 mm.
(a) What is the energy gap (in electron volts) between the valence and conduction bands for this photocell?
(b) Explain why pure silicon is opaque.
Chapter 29 Solutions
Masteringphysics With Pearson Etext - Valuepack Access Card - For College Physics
Ch. 29 - Prob. 1CQCh. 29 - Prob. 2CQCh. 29 - Prob. 3CQCh. 29 - Prob. 4CQCh. 29 - Prob. 5CQCh. 29 - Prob. 6CQCh. 29 - Prob. 7CQCh. 29 - Prob. 8CQCh. 29 - Prob. 9CQCh. 29 - Prob. 10CQ
Ch. 29 - Prob. 1MCPCh. 29 - Prob. 2MCPCh. 29 - Prob. 3MCPCh. 29 - Prob. 4MCPCh. 29 - Prob. 5MCPCh. 29 - Prob. 6MCPCh. 29 - Prob. 7MCPCh. 29 - Prob. 8MCPCh. 29 - Prob. 9MCPCh. 29 - Prob. 10MCPCh. 29 - Prob. 1PCh. 29 - Prob. 2PCh. 29 - Prob. 3PCh. 29 - Prob. 4PCh. 29 - Prob. 5PCh. 29 - What is the ratio of the number of different 3d...Ch. 29 - Prob. 7PCh. 29 - Prob. 8PCh. 29 - Prob. 9PCh. 29 - Prob. 10PCh. 29 - For bromine (Z = 35), make a list of the number of...Ch. 29 - (a) Write out the electron configuration (1s2 2s2,...Ch. 29 - Prob. 13PCh. 29 - Prob. 14PCh. 29 - Prob. 15PCh. 29 - Prob. 16PCh. 29 - Prob. 17PCh. 29 - Prob. 18PCh. 29 - Prob. 19PCh. 29 - Prob. 20PCh. 29 - Prob. 21PCh. 29 - Prob. 22PCh. 29 - Prob. 23PCh. 29 - Prob. 24PCh. 29 - Prob. 25PCh. 29 - Prob. 26PCh. 29 - Prob. 27GPCh. 29 - Prob. 28GPCh. 29 - An electron has spin angular momentum and orbital...Ch. 29 - Prob. 30GPCh. 29 - Prob. 31GPCh. 29 - Prob. 32GPCh. 29 - Prob. 33GPCh. 29 - Prob. 34GPCh. 29 - Prob. 35GPCh. 29 - Prob. 36GPCh. 29 - Prob. 37GPCh. 29 - Prob. 38GPCh. 29 - Prob. 39PPCh. 29 - Prob. 40PPCh. 29 - Prob. 41PPCh. 29 - Prob. 42PP
Knowledge Booster
Similar questions
- check the image for questionarrow_forwardHowever, the molecule we can encounter everyday continuously vibrates and interact with the surrounding causing its bond vector to vary slightly. According to a new spectroscopy analysis, the adjacent bond vectors was found to be A = 0.82i + 0.99j + 0.84k B = 1.09i + -1.01j + -0.97k What is the angle (in degrees) between the bonds based on this new data?arrow_forwardGraph below shows the electron occupancy probability P(E) as a function of energy for Bismuth (mBi = 3.47 × 10-25 kg) at the temperature T = 0 K. What is the number of conduction electrons per unit volume for Bismuth? 1 1 2 3 4 5 6 7 8 E (ev) P(E)arrow_forward
- Consider a Face Centered Cubic (FCC) lattice structured Nickel crystal. We are looking to find the surface energy of the new surface that is formed after it is sliced at the (100) plane. a- Find the value of R as function of the lattice constant a. 4R Oa = 2R Oa = 4R Oa = = 2/2R V2 Find the area A11 of (111) surface as function of R. 04R? O16R? O8R? OR? How many atoms lie on the plane (111) within the unit cell? N111 = atoms within the unit cell Find the number of atoms per unit surface area. 2 2 R2 8R2 16R? 4R? Which of the following represents the expression of the surface energt? ON BEPAarrow_forwardConsider the NaCl molecule, for which the rotational inertia is 1.30x 10-45 kg*m2. If infrared radiation with wavelength 30 μ m is Raman-scattered from a free NaCl molecule, what are the allowed wavelengths of the scattered radiation?arrow_forwardWe have a piece of Si (shown below) with dimensions 50 um x 200 um x 0.25 um. The Silicon is doped uniformly with ND = 1014 cm3. What is the resistance of the slab when measured along the length (200 um)? %3| If a light with photonic energy greater than the bandgap of Si were to be shone from the top surface such that it produces uniform hole-electron pairs Ap =An = 5E12 cm-3 throughout the slab, what would be the ratio of the illuminated conductivity vs the dark conductivity? What is the ratio of conductivity due to holes vs the conductivity due to electrons under illumination? How about in the dark? 200 Nmarrow_forward
- B1arrow_forwardAn SiO2 layer is formed on top of pure silicon. The Auger peak of silicon is at 91 eV. After oxidation, it is shifted to 78 eV. Therefore, pure and oxidized silicon are easily distinguishable. When the surface is oxidized, the silicon 91 eV peak intensity decreases because of attenuation by the silicon dioxide layer. After an SiO2 layer of thickness t is formed, the 91 eV Auger peak drops to 15% of its clean surface value. The angle of electron collection is 45o from the surface normal. If the mean free path is 0.5 nm for 91 eV electrons in silicon dioxide, what is the thickness t of the oxide coatingarrow_forward6. In a regular FCC, determine number of atoms per unit area in (1 1 0) plane 7. In a BCC unit cell, determine number of atoms per unit area in (1 1 1) plane 8. Assuming that each Au atom donates one conduction electron, calculate the drift mobility and drift velocity of the conduction electrons in gold at 20° C if the applied electric field is 200 V/cm. What is the mean free path of the conduction electrons if their mean speed is 1.4 x 10°m s ? Resistivity of pure gold at 0°C (273 K) is po= 22.8 n2 m. a, for Au from Table 2.1 is 1/251 K'. Given that Au is FCC with lattice parameter of 0.407nm. 9. Na is a monovalent metal (BCC) with a lattice parameter of 0.43nm. The drift mobility of clectrons in Na is 53 cm V's'. Calculate the electrical conductivity of Na and the mean scattering time of conduction electrons. 10. Determ ine Miller Indices for the following: A 1/2arrow_forward
- Silicon crystal has a saturated drift velocity, which limits the applications in power devices. Besides, the drift velocity of GaAs crystal decreases with the increase in the applied electric field. In other words, GaAs materials are not suitable for the applications of power devices. Can you explain the reason?arrow_forward1. An electron moving in a conjugated bond framework can be viewed as a particle in a box. An externally applied electric field of strength & interacts with the electron in a fashion described by the perturbation: V(r) = ee (x - 1) Where x is the position of the electron in the box, e is the electron charge, and Lis the length of the box. (a) Compute the first order correction to the energy (b) The first order correction to the wave-function (compute only the contribution to Y made by Y2)arrow_forwardIn the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning