Concept explainers
The intrinsic carrier
Answer to Problem 3.1P
The value of intrinsic carrier
Explanation of Solution
Calculation:
The intrinsic carrier density is given by
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The fraction of atom ionized is calculated as,
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Chapter 3 Solutions
MICROELECTRONIC CIRCUITS(LOOSE)
- A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.arrow_forwardThe intrinsic carrier concentration for Si is 1010/cm3. If 1014 donor atoms/cm3 is added, then find the equilibrium electron and hole concentration.arrow_forwardSilicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?arrow_forward
- SEMICONDUCTOR DEVICES n-type silicon sample with a donor impurity concentration of 2x1015 cm–3 is converted into p-type by gallium (Ga) diffusion so that resistivity at T= 80 °C is (100/48) Ω.cm. µp (80 °C) =300 cm2/V.s, µn (80 °C) =900 cm2/V.s and ni (80 °C) = 3x1011 cm–3. Calculate the hole concentration after converting into p-type?arrow_forwardConsider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.arrow_forwardIf the Fermi level in impure silicon is 0.4 eV above the center of the gap at a temperature of 300 K, where Eg = 1.1 eV and * ni = 1.45 x 1016 / m, what kind of impurities are there and what is their concentration?arrow_forward
- Calculate the intrinsic carrier densities in silicon and germanium at (a) 77K, (b) 300K, and (c) 450K. Use the information from the table shown.arrow_forwardThe maximum drift velocity of electrons in silicon is 107 cm/s. If the silicon has a charge density of 0.4C/cm3, what is the maximum current density in the material?arrow_forwardFind values of the intrinsic carrier concentration ni for silocon at 0Carrow_forward
- A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?arrow_forwardCalculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.arrow_forwardIn a n-type semiconductor, the electron concentration increases linearly along the x-axis from 10^16 cm^-3 at x=0 (point A) to 5x10^20 cm^-3 at x=0.5cm (point B). In the absence of any external applied electric field, estimate the approximate diffusion current density and its direction (A to B or B to A). Assume that the electron diffusion constant, Dn = 10cm^2/s.arrow_forward
- Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning