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3. A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of NA=2X1015/cm³ and an n-side doping of ND=1015/cm³. Compare a) Vbi b) xp, Xn, and W c) ɛ at x=0 d) V at x=0 Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position. 4. Repeat problem 3, taking NA=10¹7/ cm³ to be the p-side doping. Briefly compare the results here with those of problem 3.

The p-i-n diode shown schematically in Fig 5 is a three-region device with a middle region that is intrinsic and relatively narrow. Assuming the p and n regions to be uniformly doped and ND-NA=0 in the i-region. a) Roughly sketch the expected charge density, electric field, and electrostatic potential inside the device. Also draw the energy band diagram for the device under equilibrium conditions. b) What is the built-in voltage drop between the p and n regions?