MICROLEECTRONIC E BOOKS
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ISBN: 9780190853532
Author: SEDRA
Publisher: OXF
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Chapter 3.2, Problem 3.2E
To determine
The electron and hole concentration at
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A piece of crystalline silicon (Si) is doped uniformly with 4×1016 phosphorus atoms/cm3. For Si, B (material dependent parameter) = 7.3×1015 ??−3?−3/2, ?? (energy bandgap) = 1.12 ??, k (Boltzmann constant) = 8.62×10−5 ??/? or ?=1.38×10−23 ?/?, 1??=1.6×10−19 ?.a-) What type of material is this?b-) What are the hole and electron concentrations at room temperature (?=300 ?)?c-) What are the hole and electron concentrations at 400 ? ?
19.A crystalline silicon solar cell generates a photo-current density Jph= 400 A/m2 and saturation current density Jo = 10-8A.m-2. Calculate the open circuit voltage at room temperature (VT = 26 mv)
For sodium (EF = 3.23 eV) at T = 300 K, find the probabilities that the 3 eV energy level is occupied by an electron.
Chapter 3 Solutions
MICROLEECTRONIC E BOOKS
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.29P
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- The expression to calculate the conductivity of extrinsic silicon is given by, The density of acceptor atom is na=1022 m−3na=1022 m-3. The intrinsic density is ni=1.4×1016 m−3ni=1.4×1016 m-3. The mobility of electron is μe=0.16 m−3μe=0.16 m-3. The mobility of holes is μh=0.045 m−3μh=0.045 m-3. σ=naμhe 0 / 2 Images Ask an Expert Submit your questionarrow_forwardAn inter-connect bar is used in a device designed to operate between -20℃ and 60℃. It is 0.5mm long with a cross-sectional area of 0.025 mm2 and has to carry a current of 54 µA when a potential difference of 0.5 V is applied to it. B) The bar is made from silicon doped with acceptor atoms. Calculate the concentration of majority carriers and hence that of the acceptor atoms, assuming that the contribution of the minority carriers is negligible. Determine the minority carrier concentration please solve as soon as possiblearrow_forwardThe open circuit voltage of a solar cell is given by the following expressionVoc = (kT)/q * ln * [(Iph)/(I0) ], where k is Boltzman’s constant, q is the electronic charge, IL is light generationcurrent and Is is reverse saturation current. Increasing Iph and decreasing Io can improve Voc.How can you increase Iph and reduce Io?arrow_forward
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- Chemistry Q1)The electrical current can, , pass across the metal-solution interface, although there is no resistance to it A) TRUE B) FALSE Q2) If the maximum efficiency possible for a fuel cell = 70% referring to higher hating value determine the cell voltage E ? a. 0.875 V b. 10. 36 V c. 87.5 V d. 1. 036 Varrow_forwardFind the conductance of 100 ft of No. 15 AWG iron wire, which has a diameter of 64 mils. The temperature is 200 Find the resistance at 350C of an aluminum wire that has a length of 200 m and a diameter of 1 mm.arrow_forwardTungsten (W) has the BCC crystal structure. The radius of the W atom is 0.1371 nm. The atomic mass of W is 183.8 g mol−1. Calculate the number of W atoms per unit volume and density of W. Given, Avogadro’s number NA = 6.022 × 1023 mol-1.arrow_forward
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