Physics for Scientists and Engineers, Books a la Carte Edition
4th Edition
ISBN: 9780321666680
Author: GIANCOLI, Douglas C.
Publisher: Pearson College Div
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Question
Chapter 40, Problem 40P
(a)
To determine
Find the Fermi factor for copper at room temperature and is it reasonable.
(b)
To determine
Find the probability that a state
(c)
To determine
Find the probability that a state
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Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that ni =1.5 × 1016 m-3.
Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.
In a solid, consider the energy level lying 0.4eV below Fermi level.What is Probability of this level not being occupied by an electron at the room temperature?
Chapter 40 Solutions
Physics for Scientists and Engineers, Books a la Carte Edition
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
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- in a solid,consider the energy level lying 0.7eV below fermi level. what is the probability of this level not being occupied by an electron at the room temperature?arrow_forwardIn a transistor circuit given determine IB, IC, IE, VCE, αdc and VBC.Neglect VBE, take β=100 1.VBB=10V,Vcc=15v,Rc=10k,Rb=1M,arrow_forwardThe occupancy probability at a certain energy E1 in the valence band of a metal is 0.60 when the temperature is 300 K. Is E1 above or below the Fermi energy?arrow_forward
- What is the probability that, at a temperature of T = 300 K, an electron will jump across the energy gap Eg (= 5.5 eV) in a diamond that has a mass equal to the mass of Earth? Use the molar mass of carbon in Appendix F; assume that in diamond there is one valence electron per carbon atom.arrow_forwardIf the temperature of a piece of a metal is increased, does the probability of occupancy 0.1 eV above the Fermi level increase, decrease, or remain the same?arrow_forwardAssume that the total volume of a metal sample is the sumof the volume occupied by the metal ions making up the lattice andthe (separate) volume occupied by the conduction electrons. Thedensity and molar mass of sodium (a metal) are 971 kg/m3 and 23.0g/mol, respectively; assume the radius of the Na+ ion is 98.0 pm. (a)What percent of the volume of a sample of metallic sodium is occupiedby its conduction electrons? (b) Carry out the same calculationfor copper, which has density, molar mass, and ionic radius of8960 kg/m3, 63.5 g/mol, and 135 pm, respectively. (c) For which ofthese metals do you think the conduction electrons behave morelike a free-electron gas?arrow_forward
- Calculate the value of ni in silicon at room temperature (300 K).arrow_forwardDiscuss the failure and Success of Classical free electron theory? Differentiate between Conductor, Insulator and Semiconductor on the basis of Conduction and valence band?arrow_forwardAn unknown semiconductor has a band gap, Eg =1.1 eV and NC = NV where NC and NV are effective density of states in the conduction and valence band respectively. It is doped with 1015 cm-3 donors, where the donor level is 0.2 eV below conduction band minimum EC. Given that EF is 0.25 eV below EC, calculate intrinsic carrier density (ni), and the concentration of electrons and holes in the semiconductor at 300 Karrow_forward
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