Lab_2_Report___Rizka_Vanissa_Alifia

For the given biasing configuration in figure 5, determine the following parameters: a. IBq- b. Icq c. VCEq. d. Vc . e e. Ve. f. Vb. 16 V 3.9 k2 62 kf 0.68 kQ

How can I find the Equivalent Resistances Rab, Rcf and Rbd and explain what is observed on each Equivalent Resistance? (numerical answers should be rounded off to 4 decimal places)

Question 3: If the currents are in the same direction for a pair of parallel running wires, the currents on the wires are referred as Common Mode currents, ICM. On the other hand, if one of the currents is running in reverse direction (as they should normally do), the currents are referred as Differential Mode currents, IDM. It is essential in analog circuit design to keep track of differential and common mode currents. Referring to the following illustrations, assume that the separation between the wires, d, is 4 mm, the magnetic field observation point, S, is 20 mm away from the right wire, ICM- 5 mA, and IDM= 150 mA.

Please solve d and e

Please provide an example

Q4:Choose the correct items of the following statements: 1-The output voltage of an emitter follower is a-In phase with Vin - b-Much greater than Vin. c-180° out of phase. d-Generally much less than Vin- 2-The ac emitter resistance of an emitter follower a-Equal the de emitter resistance. b-Is larger than the load resistance. c-Is B times smaller than the load resistance. d-Is usually less than the load resistance. 3-A common-base amplifier can be used when a-Matching low to high impedance. b-A voltage gain without a current gain is required. c-A high- frequency amplifier is needed. d-All of the above. 4-If the voltage generator is 5 mV in an emitter follower, the output voltage across the load is closest a-5 mV. b-150mV. c-0.25 mV. d-0,5 mV,

5. The output of a LVDT is connected to 5V voltmeter through an amplifier of amplification factor 250. The voltmeter scale has 100 divisions and the scale can be read to 1/5th of a division. An output of 2mV appears across the terminals of the LVDT when the core is displaced through a distance of 0.5mm. Calculate (a) the sensitivity of the LVDT, (b) that of the whole setup and (c) the resolution of the instrument in mm.

Questiona. In an experiment the voltage required for the device is 9V dc but unfortunately the transformer available is of 220-6 Vdc. Design a circuit which can power the device (use only methods that we have studied excluding Zener diode)b. Explain the behavior of the following circuits if the input signal is triangular wave of peak voltage 5V and the biasing battery of 3V

Draw the circuit diagram for the experimental verification of Ohm's law

No cursive please

Label properly the required final circuit and DC loadline. Complete the given BJT circuit. Solve for the value of the resistors and voltage supply that will satisfy the given loadline

Discussion 1. Calculate the theoretical DC voltages and currents for the transistor bias circuit and compare them with the practically measured values. Table-1: Measured Quantities for the DC Bias Circuit Parameter B VB VE Vc Icọ VCEQ VBEQ Te Value 65.63 1.20 0.58 7.32 1418mA 6.74 0,62 18.3356 ECTR Vcc +12V R5 R3 3.3kQ всз37 R2 R4 4.7kQ 4700 Figure 5: The DC Bias Circuit of the Common Emitter Amplifier

NPN BJTs can be used as emitter followers. In the given circuit, the follower is connected to a non-ideal voltage source (Vs) with a source resistance (Rs) What should be the value of Vs for the BJT to start saturating of Rs = 5k ohms.

question from book ELECTRONIC CIRCUIT DESIGN : Question No. 2 Analyze the circuit in figure 2 to find IDQ, VGSQ and VDS. As given in circuit, the IDSS is8mA but a customer requires current more than this IDSS. Suggest a change in the circuit resistorswithout changing the MOSFET. Prove your suggested circuit by doing load line analysis. Is the Q pointin the new circuit is located at correct location?

Instruction: Show complete solution. Use at least two decimal places. Express your answer in engineering notation. Determine the voltage and current operating values for the following BJT bias circuits and draw the DC load line. 1. Determine the following: a. IB Vcc=+12 V b. Ic C. IE d. VCE e. VB Ra 240 kf2 f. Vc output IB ac input VCE B = 50 10 μF 2. Repeat item number 1 for ß = 100. How would you describe the effect of changing the value of ß? H Rc 2.2 k C₂ 10 μF

1-The output voltage of an emitter follower is a-In phase with Vin . b-Much greater than Vin. c-180° out of phase. d-Generally much less than Vin • 2-The ac emitter resistance of an emitter follower a-Equal the de emitter resistance. b-Is larger than the load resistance. c-Is B times smaller than the load resistance. d-Is usually less than the load resistance. 3-A common-base amplifier can be used when a-Matching low to high impedance. b-A voltage gain without a current gain is required. c-A high- frequency amplifier is needed. d-All of the above. 4-If the voltage generator is 5 mV in an emitter follower, the output voltage across the load is closest to a-5 mV. b-150mV. c-0.25 mV. d-0.5 mV.

Two same size PV Modules are connected in Parallel. The specification of each module is given as, Number of cells = 36, Area of each cell is 12 cm x 12 cm. Assume the necessary data. Refer to the above PV Panel choose the correct statement. a. The output current of each PV Module is 2.15A b. The output current of each PV Module is 8.6A c. The output current of each PV Module is 4.3A d. The output current of each PV Module is 1.25A

a) Compare metallic foil vs semiconductor strain gauges (construction, advantages and disadvantages).  b) Consider a Wheatstone bridge circuit (Figure 1) that has all resistances equal to 250 ?. The resistance R1 is a strain gauge that cannot sustain a power dissipation of more than 0.25 W. What is the maximum applied voltage that can be used for this bridge circuit? At this level of bridge excitation, what is the bridge sensitivity?

210TEWODU2MDM0/a/Mjg2ODQOMZMyOTc3/details 202 Open with Google Docs 3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a device of increasing importance in electronic design. (Biasing simply means the application of de levels to establish a particular set of operating conditions.) Even though you may be unfamiliar with the FET, you can perform the following analysis using only the basic laws introduced in your lectures and the information provided on the diagram. a. Determine the voltages VG and Vs. b. Find the currents I, 12, Ip, and Is. c. Determine Ds. d. Calculate V DG: VDD = 16 V 오 ID R1 2 MO RD C2.5 kfl OD G I IG I'Gs =-1.75 V I6 = 0 A Ip Is R 270 kf? Is Rs 15 k2 ctivate Page 1 2 o to Setti

Please answer the question with steps

electric , please solve question a and b

draw a simple circuit diagram to demonstrate, variation of Finger Adjust Preset 10K (a potentiometer) changing the brightness of an LED. In this case, using an analog I/O A5 as an input for the potentiometer and any of the PWM I/O as the output.

5. From the figure at the working point (DC Bias), find the parameters. The work of the circuit is as follows. When transistor Q3 is®=120, VBE voltage is 0.7 volts, VCC supply voltage is 5 volts, and VEE supply is -5 volts. R15, R17, R16 and R18 are 25k, 25k, 550, and 370 ohms, respectively. VCC R15 R16 i Vc VB Q3 R17 R18 VEEO Voltage value VTH : Answer.... IC current : . 2 Resistance value Rth : Answer...... 5 VCE Voltage :; IB current value : Answer... S VC Voltage :;

QI. A load cell uses a strain gauge of R-1202 GF-2.02 mounted on an aluminum column of 15 cm diameter to measure weigh of objects. a) Find the change in resistance per kg placed on the column. Is this change an increase or decrease in resistance? b) Draw a diagram of the system showing how active and dummy gauges should be mounted. c) Show how to add another active gauge and dummy gauge to the system to provide increased sensitivity. d) Assume a bridge excitation of 5.0 volts; determine the bridge deflection voltage per 500 kg placed on the column. Note: The stress is uniaxial and the transversal strain is negligible. Aluminum constant E-6.89x10" N/m i only need part d pls

Instruction: Show complete solution. Use at least two decimal places. Express your answer in engineering notation. Determine the voltage and current operating values for the following BJT bias circuits and draw the DC load line. 1. Determine the following: a. IB Vcc = +12 V b. Ic C. IE d. VCE e. VB f. Vc ac output ac input C₁ F 10 μF RB 240 ΚΩ Ic Rc 2,2 ΚΩ C₂ HE 10 μF VCE B = 50

25: Choose the correct items of the following statements: 1- The output voltage of an emitter follower is a - In phase with V. b - Much greater than V. c - 180 ° out of phase. d - Generally much less than V. 2- The ac emitter resistance of an emitter follower a - Equal the de emitter resistance. b - Is larger than the lead resistance. c - Is B times smaller than the load resistance. d - Is usually less than the load resistance. 3 - A common - base amplifier can be used when a - Matching low to high impedance. b - A voltage gain without a current gain is required. c - A high - frequency amplifier is needed. d - All of the above. 4 - If the voltage generator is 5 mV in an emitter follower, the output voltage across the load is closest o a - 5 mV. b - 150mV. c - 0.25 mV. d - 0.5 mV.

. In an experiment the voltage required for the device is 9V dc but unfortunately the transformer available is of 220-6 Vdc. Design a circuit which can power the device.b. Explain the behavior of the following circuits if the input signal is triangular wave of peak voltage 5V and the biasing battery of 3V

Choose the correct option.    1. When operated in cutoff and saturation, the transistor acts like a a) linear amplifier b) switch c) variable capacitor d) variable resistor   2. A circuit contains two un-equal resistances in parallel a) current is same in both b) large current flows in larger resistor c) potential difference across each is same d) smaller resistance has smaller conductance   3. Which of the following is true for a bipolar junction transistor a) IB is controlled by RB b) IB is controlled by VBB c) VCE is controlled by IB d) IC is controlled by IB e) All of the above   4. Which of the following are made of transistors a) Integrated Circuits (ICs) b) Microprocessors c) Logic Gates d) All of the above   5. Multisim is used for a) Programming b) Inserting multiple sims into a software c)…

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Very important so please answer all questions

Given the emitter follower schematic below and the following information: Vi = 2V β = 100 VCE,Sat = 0V VBE,On = 0.7V VFWD = 0.7V (Forward voltage of diode) Determine the values of VB (Base Voltage) and V0 (Output/Emitter Voltage).Also, determine the state of operation of the BJT and the diode.

PART II-CIRCUIT DESIGN So, you work for a company that fabricates prototypes of a variety of electronic devices. In the midst of constructing your latest circuit for a client, you cannot locate a specific type of N-channel FET component that you need to complete the project. Then, you remember that the last person to have used the transistors was your coworker Joe. You ask Joe if he knows where the FETS may be and he gives a long winding answer that does not help. What he does offer is a handful of transistors from his pocket with very faded, indecipherable markings, all of which have the same TO-18 packaging. Joe states that he knows some of these are BJTS and others are FETs. When you ask the obvious question as to how you would tell them apart, he goes on to suggest that you "just test them beforehand to see which one is which." Joe leaves mentioning something about Vegas and planning on being sick the next day. He will not be any further help. Given the situation, please: •…