Answered: Calculate the electron-hole den sity…

Calculate the electron-hole den sity under steady-state exposur e in n-type silicon with GL = 10 16cm ^ -3s ^ -1 and Nd = 10 ^ 15cm ^ -3 and Tn = Tp = 10us. %3D

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 13PP

See similar textbooks

Related questions

Q: At T=300K, the electron concentration of a semiconductor material isn, = 10" cm. The bandgap energy…

A: Given-Eg=1.1 eVNC=2.8×1019cm-3=2.8×1025 m-3Nv=1×1019cm-3=1×1025 m-3n0=1011 cm-3=1017m-3…

Q: Calculate the thermal-equilibrium hole concentration (cm-3) in Silicon at T=375 k. Assume the Fermi…

Q: : If you know that the zener voltage at a temperature of 25C is equal to (16V), calculate the…

Q: Tin (Sn) has a superconductive critical temperature Tc = 3.7 K and critical magnetic field at T = 0…

A: Given : critical temperature of sn (TC) =3.7k critical magnetic field at T=0k = BC=H0= 31mT current…

Q: • Ef 8tV 3/2 | g(e)f(e)de (2me,)2 3h3 0. Where g(e), density of states is given by, 4πmV g(e):…

Q: What mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction…

Q: Silicon has a diamond structure, and in a lattice constanta=0.543 nm unit cell, the volume filled…

Q: What is the hole diffusion constant (cm2/s) in a piece of silicon doped with 3x1015cm-3 of donors…

Q: These "holes" can move through p-type doped silicon, and effectively act as though they are charges.

A: There are two type of semiconductor. 1. n type with majority electrons and minority holes 2. p type…

Q: lonsider an Ponic Crystal is mposed 4N fons both Pasitive and n with negative oppositely Chsigect…

A: The ions present in the ionic crystal = 4N ions. The charge on both positive and negative ion = ±q.…

Q: Assume that the mobility of electrons in silicon at T = 300 K is = 1300 cm²/V-s. Also assume that…

Q: Using linear interpolation method, identify the indium content of in,Ga 1 As which has a bandgap…

Q: A silicon transistor is biased with base reistor method. If ß = 100, VBe = 0.7V, zero signal…

A: Apply the KVL in the circuit.

Q: What is the probability of an electron being thermally promoted to the conduction band in silicon…

A: Given Data : The value of Eg for silicon is given as Eg = 1.07 eV. The room temperature is given as…

Q: Q1. T= 300K. Use n, = 1 x 101 cm. %3D A silicon sample doped with ND=4 x 1015 cm , and NA=2 x 10 cm.…

A: “Since you have posted a question with multiple sub-parts, we will solve first three subparts for…

Q: Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent…

A: Given: Number of Si crystal, n = 5 × 1028 atoms m-3 Dopping = 1 ppm = 10-6 ni =1.5 × 1016 m-3.

Q: B/ Find the resistivity of intrinsic Silicon if n=1 516x10"c and p=1300 if donor -typc impurity is…

A: Given:

Q: In a cubic lattice, what is the angle (in degrees) between the [010] and [001] directions?

A: Miller indices are used to specify the direction in the latices: So the angle between[[h1, k1, l1]…

Q: The angle between [111] and [11-2] directions in a cubic crystal is (in degrees) а. 45 b. 90 OC. d.…

A: The angle between two planes of cubic crystal having miller indices (h1,k1,l1) and (h2,k2,l2) is θ…

Q: Estimate the maximum possible collection efficiency for a germanium solar cell (Egap = 0.66 eV).…

Q: Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if…

A: Given : Temperature →T=300 K Fermi energy →Ef=0.2 eV Band gap→Eg=1 eV C.B concentration→Nc=2×1019…

Q: Evaluate the Packing fractions of the sc, fcc, bcc and hcp crystals.

Q: How could you make compensated silicon that has twice as many acceptors as donors?

A: A compensated semiconductor contains both types of dopants. There are two types of dopants added to…

Q: Consider a silicon pn junction at T 300K with acceptor doping concentrations of 10t cm- and donor…

Q: QIA/ Find the resistivity of intrinsic Silicon if n-1.516x10"c and u-1300 if donor -type impurity is…

A: Resistivity is the property of a metal or non metal to conduct electrons through it. It is the…

Q: when a silicon diode is reverse biased , it voltage equal : O 0.7 V O -0.7 V O ov O non of the…

Q: If a metal has 2 x 10 m electrons, calculate radius of Fermi sphere (k:) and Fermi velocity. (given…

A: According to question we need to find--- radius of Fermi sphere? Fermi velocity?

Q: The atomic radius of silver which crystallizes in FCC structure is 0.14nm. Calculate the Fermi…

Q: calculate the thermal equilibriumi concentrutin of electron and holes Fora given fermi enersy…

A: The change in the Fermi level is a function of a donor and acceptor impurity concentration that are…

Q: QI- Given a silicon with N, = 1.04 × 1019 cm-³ at T= 300 K and the Fermi energy is 0.27 eV above the…

Q: For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0…

Q: Q#04. (a) Calculate the number of atoms per unit area in (100), (110) and (111) planes of in bcc…

A: In the body centered cubic structure (BCC), the number of atoms in (100) plane is 1 ( no atoms on…

Q: cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.

A: Given:- T=300 K Ec-EF =0.3 eV Values within 5% error will be considered correct. Find:- calculate…

Q: In a p-type silicon sample. With the hole, concentration is equal to 2x1016 cm-³. If the intrinsic…

A: Hole concentration, p = 2×1016 /cm³ Intrinsic carrier concentration, N = 4×1011 /cm³ Electron…

Q: It is true that one can force a polished flat end of a p type silicon to a flat end of an n type…

A: When a p-type silicon is suitably joined with n-type silicon then a junction formed between them is…

Q: Why is the reverse current in a silicon diode much smaller than that in a comparable germanium…

A: The outer shell of Germanium has four electrons while that of Silicon has three shells. Due to this,…

Q: An SiO2 layer is formed on top of pure silicon. The Auger peak of silicon is at 91 eV. After…

A: Given: Mean free path λ for electrons is 0.5 nm. Angle of collection θ is 45°. Initial intensity is…

Q: A silicon wafer is doped with 5x1020 phosphorus atoms/m³. Calculate the hole concentrations after…

Q: A silicon p-n junction (n = 1010 cm-3, Na = 1017 cm-3 and Na = 4 x 1016 cm3) is biased with an…

Q: Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters:…

Q: In a p-type silicon sample with the hole concentration is equal to 2x1016 cm³. If the intrinsic…

Q: Consider a silicon pn junction at T = 300 K with an acceptor doping concentration (1 x 101cm-3) and…

A: Write the expression for the built-in potential barrier. Here, k represents the Boltzmann constant,…

Q: Calculate the thermal-equilibrium hole concentration (cm-3) in Silicon at T=375 k. Assume the Fermi…

A: According to question --- Given data-- T = 375 K. fermi energy E f = 0.25 eV above the valence band…

Q: Find the resistivity of p-type silicon with NA = 10^15/cm3 at T300K. Assume that for intrinsic…

Question

Calculate the electron-hole den
sity under steady-state exposur
e in n-type silicon with GL = 10
^ 16cm ^ -3s ^ -1 and Nd = 10 ^
15cm ^ -3 and Tn = Tp = 10us.
%3D
%3D

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2 Solution

VIEW

Step by step

Solved in 2 steps with 1 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.

Similar questions

The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?
The measured density of a NaF crystal is 2.558 g/cm3 . What is the equilibrium separate distance of Na+ and Flions?
Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure 9.12 (a) Density of state for a free electron gas; (b) probability that a state is occupied at T = 0 K; (c) density if occupied states at T = 0 k.
For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.
For silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0, calculate the equilibrium hole concentration in cm^{-3}. Values within 5% error will be considered correct.
Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Ne=2 ×10 23 /m³, Ny= N/2).
For silicon at T = 300 K, calculate the equilibrium electron concentration in cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.
determine the saturation current in a p-n junction diode at 256 K if a voltage of 0.0678 V produces a positive current of 36.6 mA. (a) 3.83 mA (b) 1.62 mA (C) 1.78 mA (d) 6.03 mA
A silicon PN diode has reverse saturation current of 20 µA at temperature 200 Calculate its reverse saturation current at 600C.
Consider a p+-n Si diode with NA = 1018 cm-3 and ND = 1016 cm-3. The hole diffusion coefficient in the n-side is 10 cm2/s and carrier lifetime τp =10-7 s. The device area is 10-4 cm2. Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.
Consider a p+ -n Si diode with NA = 1018 cm -3 and ND = 1016 cm -3 . The hole diffusion coefficient in the n-side is 10 cm2 /s and carrier lifetime τp =10-7 s. The device area is 10-4 cm2 . Calculate the reverse saturation current and the forward current at a forward bias of 0.7 V at 300 K.
The crystal structure of GaAs is zinc blende with lattice constant a = 0.565 nm. Calculate the numberdensities of Ga and As atoms per cm3