Fou are given a GAs semiconductor sample and asked to design a PIN photo-detector for macimum quantum efficiency. You are given the following for your design: 1. 17.5 % of the incident photons to be detected are reflected back from the detector surface. 2. The absorption coefficient of Gads at the incident photon energy is ae-I× 10 Cm 3. Neglect the diffusion current and the thicknesses of the nt and pt regions. What is the maximum detector efficiency you will obtain from your design? a. 52.15 % O b. 57.75 % Oc. 26.50 % O d. 10.90 % O e. 66.00 %

Fou are given a GAs semiconductor sample and asked to design a PIN photo-detector for macimum quantum efficiency. You are given the following for your design: 1. 17.5 % of the incident photons to be detected are reflected back from the detector surface. 2. The absorption coefficient of Gads at the incident photon energy is ae-I× 10 Cm 3. Neglect the diffusion current and the thicknesses of the nt and pt regions. What is the maximum detector efficiency you will obtain from your design? a. 52.15 % O b. 57.75 % Oc. 26.50 % O d. 10.90 % O e. 66.00 %

Intro Spectroscopy

5th Edition

ISBN:9781305221796

Author:PAVIA

Publisher:PAVIA

Chapter11: Combined Structure Problems

Section: Chapter Questions

Problem 24P

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