Calculate the built-in voltage of a pn junction in which the p and n regions are doped equally with5E17 atoms/cm³. Assume that n; = 1.5E10/cm3. With no external voltage applied, what is the width of thedepletion region and how far does it extend into the p and n regions? If the cross-sectional area of thejunction is 100 µm², find the magnitude of the charge stored on either side of the junction.

According to the question, if NA=ND=5×1017 cm-3ηi=1.5×1010 cmThen, we need to calculatea Built-…

Answered: Calculate the built-in voltage of a pn…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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(c) If an ideal MOS structure is made of a p-type doped Si substrate with a doping concentration of NA = 6 × 1018 cm-3 , and an SiO2 layer with a thickness of 1.1 nm, calculate the depletion width at the threshold (VT) assuming room temperature (T = 300 K). (d) Calculate the threshold voltage (VT) of the ideal MOS structure defined in the question Q1(c).
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
A diffused silicon PN junction has a linearly graded junction in the P-side with ?=10^19cm−3, and a uniform doping of 3×10^14 cm−3on the N-side. If the depletion layer width of the P-side is 0.8μm at zero bias, find the total depletion layer width, built-in potential, maximum field at zero bias and sketch the potential distribution.
A certain PN junction has a linearly graded junction on the p-side, Na = ax, where x is the distance from the physical junction to p-side and a = 1019 cm-4 , and a uniform doping of 3 x 1014 cm-3 on the n-side. It is operated at T=300K. A. Calculate the electric field as a function of x? B. If the depletion layer width of the p-side is .8um at zero bias, find the total depletion layer width
A pn junction operating in this forward-bias region with a current I of 0.4 mA is found to have a diffusion capacitance of 1 pF. What diffusion capacitance do you expect this junction to have at I = 0.1 mA? What is the mean transit time for this junction?
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1.What is the Fermi-Dirac probability for electrons at the intrinsic Fermi level, fe(Ei)?
Assume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°C
A 100Ω resistor is to be made at room temperature in arectangular silicon bar of 1 cm in length and 1mm 2 in cross sectionalarea by doping it appropriately with phosphorous atoms. If theelectron mobility in silicon at room temperature be 1350 cm 2 /V-second. Calculate the dopant density needed to achieve this. Neglectthe insignificant contribution by the intrinsic carriers.
A 10KQ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm ,at the working temperature. The intrinsic carrier density of Ge is 2.5 x 1019 m3, and the electron and hole mobilities are 0.4 m2 N.sec. and 0.2 m? N.sec. respectively.
Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.
(a) Calculate the indium content of an InGaAs ternary compound semiconductor using a linear approximation, which would have a bandgap of 1.155 eV knowing that a bandgap (EG InAs) of InAs is 0.354 eV and a bandgap (EG GaAs) of GaAs is 1.424 eV. (b) Calculate the effective electron mass of the InGaAs ternary compound semiconductor using a linear approximation with an indium content from question (a). Use a relative electron effective mass of InAs of 0.031 and of GaAs of 0.0665.
A silicon PN junction employs ND = 5 × 1017 cm−3 and NA = 4 × 1016 cm−3.(a) Determine the majority and minority carrier densities on both sides.(b) Calculate the built-in potential at T = 250 K, 300 K, and 350 K.(c) Repeat (a) and (b) if the p-side was not doped due to a manufacturing error.

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