Q.2] A silicon p-i-n photodiode with an area of 1.5 mm? is to be used in conjunction with a load resistor of 100 2. If the requirement for the device is a fast response time, estimate the thickness of the intrinsic region that should be provided. It may be assumed that the permittivity for silicon is 1.04 x 10-10 F m and that the electron saturation velocity is 107 m s'.

Q.2] A silicon p-i-n photodiode with an area of 1.5 mm? is to be used in conjunction with a load resistor of 100 2. If the requirement for the device is a fast response time, estimate the thickness of the intrinsic region that should be provided. It may be assumed that the permittivity for silicon is 1.04 x 10-10 F m and that the electron saturation velocity is 107 m s'.

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 82P: A tightly wound solenoid at 4.0 K is 50 cm long and is constructed from Nb wire of radius 1.5 mm....

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