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The intrinsic electrical conductivity a of a semiconductor can be approximated by:
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Chapter 4 Solutions
Matlab
- Question 2: R Let R = 1 KO, RL = 47 KQ and assume D is a silicon diode. V D Z D a. Determine the state of the diode D when Vị = 0. b. Determine the value of vi at which D (1)'a E5V changes state. c. Plot the waveform of vo(t) when vi (t) is a sinusoidal signal with 20 V peak to peak amplitude and 1 KHz frequency.arrow_forwardProblem 3 For the circuit shown below, assume that: R=20kQ, D1, D2, D3 and D4 are modeled by a battery of 0.8 V and rB = 30Q, the Zener diode has 5 V breakdown voltage and rz= 502. 'Vin' is a sinusoidal signal with 1 kHz frequency and amplitude voltage of 15 V: • Sketch 'Vout' and Iz' for -15V< Vin <15V. • Plot 'Vout' and Iz’ versus time • What is the function of this circuit? Vout w- + + D4 D, Vin Darrow_forwardA single crystal intrinsic semiconductor is at a temperature of 300 K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level by (a) 13.45 meV (c) 26.90 meV (b) 18.02 meV (d) 9.01 meVarrow_forward
- R1 C1 600 + 1n V1 D1 {Vi} R2 Vo 35k The input signal vi(t) = -7V for 0<=t<7us, and OV for 7us<=t<14us. For each of the first two 7us time segments above (0 to 7us and 7 to 14us). What is the state of the diode assuming it is ideal and the capacitor is initially uncharged? Sketch Vo(t) and write its expression, then verify the assumption for the diode.arrow_forwardQ7/ Silicon has a conductivity of 5 x 10-4 (N.m)-1 when pure. How many indium atoms/m3 are required so that the conductivity of 200 (N.m)-1 could be achieved in silicon using indium as an impurity? Given that the mobility of holes in silicon is 0.05 and of electrons is V. Sec m2 0.13 V. Secarrow_forwardConsider a material where the probability of a hole occupying a state in the middle of the valence band at room temperature is 0.7, what type of material is this? O An insulator O A conductor There is no enough information to determine the nature of the material O A semiconductorarrow_forward
- R1 C1 600 1n V1 D1 {Vi} R2 Vo D 35k The input signal vi(t) = -7V for 0<=t<7us, and OV for 7us<=t<14us. For each of the first two 7us time segments above (0 to 7us and 7 to 14us). What is the state of the diode assuming it is ideal and the capacitor is initially uncharged? + +arrow_forward6) You work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a) calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of this material. 30 ст 2 ст 1 cmarrow_forwardThe output of a diode used as a solar cell is given by IC =1−10−15[exp(40VC)−1] amperes What operating point corresponds to Pmax? What is Pmax? What are the values of ISC and VOC?arrow_forward
- The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.arrow_forwardP9.77. A certain diode has IDQ = 4 mA and id (t) = 0.5 cos (200πt) mA. Find an expression for ip (t), and sketch it to scale versus time.arrow_forwardQuestion 1: In the circuit shown below, the output (Vo = 10V Max.) Unipolar. The frequency of Primary is 60 Hz. The diodes are Silicon with VD = 0.7V. a. Sketch the output without a Capacitor. b. Determine Voc without a Capacitor. c. Sketch Vs (at the Secondary). d. Determine Voc with a Capacitor of 10 uF across RL. e. Determine the RMS Value of Vp (at the Primary). f. PIV (Peak Inverse Voltage). 10:1 Output C. 22 k1 All diodes are IN4001. | 00000arrow_forward
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