Explanation Given: The enthalpy of formation for vacancies is 0.94 eV / atom . The gold is annealed to a temperature that results in 1 vacancy for every 10 8 gold atoms. Formula used: The formula to calculate the concentration of vacancies in silicon is given by, n v N = exp ( − Δ H v k T ) Here, n v N is the concentration of vacancies in silicon, k is Boltzmann’s constant, Δ H v is enthalpy of vacancy formation, and T is temperature at which the vacancy sites are formed. Take natural log on both sides of the above equation. ln ( n v N ) = ln ( exp ( − Δ H v k T ) ) ln ( n v N ) = − Δ H v k T T = − Δ H v k 1 ln ( n v N )

Materials Science And Engineering Properties

1st Edition

ISBN: 9781111988609

Author: Charles Gilmore

Publisher: Cengage Learning

See similar textbooks

Concept explainers

Temperature effects on atom arrangements

Atoms are the smallest units of matter. Atoms can be subdivided into electrons, protons, and several other subatomic particles. Groups or combinations of atoms form molecules that primarily decide the property and behavior of materials. These molecules h…

Question

Chapter 4, Problem 4.17P

To determine

The temperature at which annealing should be done.

Expert Solution & Answer

Chapter 4 Solutions

Materials Science And Engineering Properties

Ch. 4 - Prob. 1CQ Ch. 4 - Prob. 2CQ Ch. 4 - Prob. 3CQ Ch. 4 - Prob. 4CQ Ch. 4 - Prob. 5CQ Ch. 4 - Prob. 6CQ Ch. 4 - Prob. 7CQ Ch. 4 - Prob. 8CQ Ch. 4 - Prob. 9CQ Ch. 4 - Prob. 10CQ

Ch. 4 - Prob. 11CQ Ch. 4 - Prob. 12CQ Ch. 4 - Prob. 13CQ Ch. 4 - Prob. 14CQ Ch. 4 - Prob. 15CQ Ch. 4 - Prob. 16CQ Ch. 4 - Prob. 17CQ Ch. 4 - Prob. 18CQ Ch. 4 - Prob. 19CQ Ch. 4 - Prob. 20CQ Ch. 4 - Prob. 21CQ Ch. 4 - Prob. 22CQ Ch. 4 - Prob. 23CQ Ch. 4 - Prob. 24CQ Ch. 4 - Prob. 25CQ Ch. 4 - Prob. 26CQ Ch. 4 - Prob. 27CQ Ch. 4 - Prob. 28CQ Ch. 4 - Prob. 29CQ Ch. 4 - Prob. 30CQ Ch. 4 - Prob. 31CQ Ch. 4 - Prob. 32CQ Ch. 4 - Prob. 33CQ Ch. 4 - Prob. 34CQ Ch. 4 - Prob. 35CQ Ch. 4 - Prob. 36CQ Ch. 4 - Prob. 37CQ Ch. 4 - Prob. 38CQ Ch. 4 - Prob. 39CQ Ch. 4 - Prob. 40CQ Ch. 4 - Prob. 41CQ Ch. 4 - Prob. 42CQ Ch. 4 - Prob. 43CQ Ch. 4 - Prob. 1ETSQ Ch. 4 - Prob. 2ETSQ Ch. 4 - Prob. 3ETSQ Ch. 4 - Prob. 4ETSQ Ch. 4 - Prob. 5ETSQ Ch. 4 - Prob. 6ETSQ Ch. 4 - Prob. 7ETSQ Ch. 4 - Prob. 1DRQ Ch. 4 - Prob. 4.1P Ch. 4 - Prob. 4.2P Ch. 4 - Prob. 4.3P Ch. 4 - Prob. 4.4P Ch. 4 - Prob. 4.5P Ch. 4 - Prob. 4.6P Ch. 4 - Prob. 4.7P Ch. 4 - Prob. 4.8P Ch. 4 - Prob. 4.9P Ch. 4 - Prob. 4.10P Ch. 4 - Prob. 4.11P Ch. 4 - Prob. 4.12P Ch. 4 - Prob. 4.13P Ch. 4 - Prob. 4.14P Ch. 4 - Prob. 4.15P Ch. 4 - Prob. 4.16P Ch. 4 - Prob. 4.17P Ch. 4 - Prob. 4.18P Ch. 4 - Prob. 4.19P Ch. 4 - Prob. 4.20P Ch. 4 - Prob. 4.21P Ch. 4 - Prob. 4.22P Ch. 4 - Prob. 4.23P Ch. 4 - Prob. 4.24P Ch. 4 - Prob. 4.25P

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, civil-engineering and related others by exploring similar questions and additional content below.

Recommended textbooks for you

Materials Science And Engineering Properties
Civil Engineering
ISBN:9781111988609
Author:Charles Gilmore
Publisher:Cengage Learning

Materials Science And Engineering Properties

Civil Engineering

ISBN:9781111988609

Author:Charles Gilmore

Publisher:Cengage Learning

SEE MORE TEXTBOOKS

The temperature at which annealing should be done.

Solution Summary: The author explains the formula to calculate the concentration of vacancies in silicon, the enthalpy of formation, and the temperature at which vacancy sites are formed.

Concept explainers

The temperature at which annealing should be done.

Chapter 4 Solutions