Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Concept explainers
Textbook Question
Chapter 4, Problem 4.30P
The small−signal parameters of an enhancement−mode MOSFET source follower are
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
The ac equivalent circuit for an amplifier is shown . Assume the capacitors have infinite value, RI = 10 kΩ, RG = 1 MΩ, RD = 3.9 kΩ, and R3 = 33 kΩ. Calculate the voltage gain for the amplifier if the MOSFET Q-pointis (2 mA, 7.5 V). Assume Kn = 1 mA/V2 and λ = 0.015 V−1.
The ac equivalent circuit for an amplifier is shown. Assume the capacitors have infinite value, RI = 100 kΩ, RG = 6.8MΩ, RD = 50 kΩ, and R3 = 120 kΩ. Calculate the voltage gain for the amplifier if the MOSFET Q-point is (100 μA, 5 V). Assume Kn = 450 μA/V2 and λ = 0.02 V−1.
Please answer ASAP, I'll upvote... The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the drain current of M2 given that IBIAS = 2mA and VOUT = 2.5V.
Chapter 4 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 4 - Prob. 4.1EPCh. 4 - For the circuit shown in Figure 4.1, VDD=3.3V and...Ch. 4 - Prob. 4.1TYUCh. 4 - For the circuit shown in Figure 4.1, VDD=3.3V and...Ch. 4 - For the circuit in Figure 4.1, the circuit and...Ch. 4 - The parameters for the circuit in Figure 4.8 are...Ch. 4 - A transistor has the same parameters as those...Ch. 4 - The parameters of the circuit shown in Figure 4.14...Ch. 4 - Consider the circuit shown in Figure 4.14. Assume...Ch. 4 - For the circuit shown in Figure 4.19, the...
Ch. 4 - The commonsource amplifier in Figure 4.23 has...Ch. 4 - Consider the commonsource amplifier in Figure 4.24...Ch. 4 - The parameters of the transistor shown in Figure...Ch. 4 - The sourcefollower circuit in Figure 4.26 has...Ch. 4 - The circuit and transistor parameters for the...Ch. 4 - Consider the circuit shown in Figure 4.28 with...Ch. 4 - Prob. 4.8TYUCh. 4 - The transistor in the sourcefollower circuit shown...Ch. 4 - Consider the circuit shown in Figure 4.35 with...Ch. 4 - For the circuit shown in Figure 4.32, the circuit...Ch. 4 - The bias voltage for the enhancementload amplifier...Ch. 4 - Assume the depletionload amplifier in Figure...Ch. 4 - For the circuit shown in Figure 4.45(a), assume...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - For the enhancement load amplifier shown in Figure...Ch. 4 - For the cascade circuit shown in Figure 4.49, the...Ch. 4 - The transistor parameters of the NMOS cascode...Ch. 4 - The transistor parameters of the circuit in Figure...Ch. 4 - Reconsider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.13TYUCh. 4 - For the circuit shown in Figure 4.59, the...Ch. 4 - Discuss, using the concept of a load line, how a...Ch. 4 - How does the transistor widthtolength ratio affect...Ch. 4 - Discuss the physical meaning of the smallsignal...Ch. 4 - Prob. 4RQCh. 4 - Prob. 5RQCh. 4 - Discuss the general conditions under which a...Ch. 4 - Why, in general, is the magnitude of the voltage...Ch. 4 - What are the changes in dc and ac characteristics...Ch. 4 - Sketch a simple sourcefollower amplifier circuit...Ch. 4 - Sketch a simple commongate amplifier circuit and...Ch. 4 - Prob. 11RQCh. 4 - Prob. 12RQCh. 4 - State the advantage of using transistors in place...Ch. 4 - Prob. 14RQCh. 4 - An NMOS transistor has parameters VTN=0.4V ,...Ch. 4 - A PMOS transistor has parameters VTP=0.6V ,...Ch. 4 - An NMOS transistor is biased in the saturation...Ch. 4 - The minimum value of smallsignal resistance of a...Ch. 4 - An nchannel MOSFET is biased in the saturation...Ch. 4 - The value of for a MOSFET is 0.02V1 . (a) What is...Ch. 4 - Prob. 4.7PCh. 4 - The parameters of the circuit in Figure 4.1 are...Ch. 4 - The circuit shown in Figure 4.1 has parameters...Ch. 4 - For the circuit shown in Figure 4.1, the...Ch. 4 - In our analyses, we assumed the smallsignal...Ch. 4 - Using the results of Problem 4.11, find the peak...Ch. 4 - Consider the circuit in Figure 4.14 in the text....Ch. 4 - A commonsource amplifier, such as shown in Figure...Ch. 4 - For the NMOS commonsource amplifier in Figure...Ch. 4 - The parameters of the circuit shown in Figure...Ch. 4 - Repeat Problem 4.15 if the source resistor is...Ch. 4 - The ac equivalent circuit of a commonsource...Ch. 4 - Consider the ac equivalent circuit shown in Figure...Ch. 4 - The transistor in the commonsource amplifier in...Ch. 4 - The parameters of the MOSFET in the circuit shown...Ch. 4 - For the commonsource amplifier in Figure P4.22,...Ch. 4 - The transistor in the commonsource circuit in...Ch. 4 - Prob. 4.24PCh. 4 - For the commonsource circuit in Figure P4.24, the...Ch. 4 - Design the common-source circuit in Figure P4.26...Ch. 4 - For the commonsource amplifier shown in Figure...Ch. 4 - For the circuit shown in Figure P4.28, the...Ch. 4 - Design a commonsource amplifier, such as that in...Ch. 4 - The smallsignal parameters of an enhancementmode...Ch. 4 - The opencircuit (RL=) voltage gain of the ac...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - The source follower amplifier in Figure P4.33 is...Ch. 4 - Consider the circuit in Figure P4.34. The...Ch. 4 - The quiescent power dissipation in the circuit in...Ch. 4 - The parameters of the circuit in Figure P4.36 are...Ch. 4 - Consider the source follower circuit in Figure...Ch. 4 - For the sourcefollower circuit shown in Figure...Ch. 4 - In the sourcefollower circuit in Figure P4.39 with...Ch. 4 - For the circuit in Figure P4.39, RS=1k and the...Ch. 4 - Prob. D4.41PCh. 4 - The current source in the sourcefollower circuit...Ch. 4 - Consider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.44PCh. 4 - Figure P4.45 is the ac equivalent circuit of a...Ch. 4 - The transistor in the commongate circuit in Figure...Ch. 4 - The smallsignal parameters of the NMOS transistor...Ch. 4 - For the commongate circuit in Figure P4.48, the...Ch. 4 - Consider the PMOS commongate circuit in Figure...Ch. 4 - The transistor parameters of the NMOS device in...Ch. 4 - The parameters of the circuit shown in Figure 4.32...Ch. 4 - For the commongate amplifier in Figure 4.35 in the...Ch. 4 - Consider the NMOS amplifier with saturated load in...Ch. 4 - For the NMOS amplifier with depletion load in...Ch. 4 - Consider a saturated load device in which the gate...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - A sourcefollower circuit with a saturated load is...Ch. 4 - For the sourcefollower circuit with a saturated...Ch. 4 - The transistor parameters for the commonsource...Ch. 4 - Consider the circuit in Figure P4.60. The...Ch. 4 - The ac equivalent circuit of a CMOS commonsource...Ch. 4 - Consider the ac equivalent circuit of a CMOS...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - Figure P4.65 shows a commongate amplifier. The...Ch. 4 - The ac equivalent circuit of a CMOS commongate...Ch. 4 - The circuit in Figure P4.67 is a simplified ac...Ch. 4 - Prob. 4.68PCh. 4 - The transistor parameters in the circuit in Figure...Ch. 4 - Consider the circuit shown in Figure P4.70. The...Ch. 4 - For the circuit in Figure P4.71, the transistor...Ch. 4 - For the cascode circuit in Figure 4.51 in the...Ch. 4 - The supply voltages to the cascode circuit in...Ch. 4 - Consider the JFET amplifier in Figure 4.53 with...Ch. 4 - For the JFET amplifier in Figure P4.75, the...Ch. 4 - The parameters of the transistor in the JFET...Ch. 4 - Consider the sourcefollower WET amplifier in...Ch. 4 - For the pchannel JFET sourcefollower circuit in...Ch. 4 - The pchannel JFET commonsource amplifier in Figure...Ch. 4 - Prob. 4.82CSPCh. 4 - A discrete commonsource circuit with the...Ch. 4 - Consider the commongate amplifier shown in Figure...Ch. 4 - A sourcefollower amplifier with the configuration...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- For the Circuit shown, Let: VCC = 3.3V R1 = 85 kΩ RE = 500 Ω R2 = 35 k Ω RC = 4k Ω β = 150 Using approximation, determine the Q-point parameters: IBQ, ICQ, and VCEQ. Indicate the exact numerical values, following the given unit.arrow_forwardConsider the circuit depicted in Figure. If vs(t) =−8 + 2u(t) V, determine Vc(0+)arrow_forwardPlease analyze the circuit and determine the voltage gain of both (Av,dc = Vc/Vb for DC analysis) and (Av,ac = Vo/Vs for AC analysis) where RB = 450K, Rs = 80, Ci = 47 uF, RC = 3.3K, Co = 4.7 uF, RL = 100K. In addition, find the output equivalent resistance from the Vo terminal (in AC) and the input equivalent resistance from the Vs terminal (in AC). Hint: the transistor is a Si-based one. You have to write all the calculation details and verbal explanations. You can calculate hie = beta * 26mV / Ie (mA, dc) and use the hoe as an open circuit.arrow_forward
- 45 For the given circuit calculate I, Ic, Vce,Vs,Ve,Vac. Assume Vge=0.7V, p = 50, Rg =190KQ , Rc=1.5KQarrow_forwardA common emitter amplifier as shown in Figure Q2 has the following parameters, β = 100, R1= 33K, R2 = 10K, RC = 3K3, RE = 1K, ro = and VBE = 0.7 V.State all assumptions made.i. Check whether βRE>>10R2 is satisfiedii. Use the appropriate approach of analysis to determine the Quiescent point; IBQ,ICQ and VCEQ.iii. Draw the small signal equivalent circuit. Determine input impedance, Zin, outputimpedance, Zout, and the voltage gain, AV, if RL=20kΩ.arrow_forwardAnswer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).arrow_forward
- The common-emitter discrete amplifier shown has the following values: RB1 = 500 kΩ, RB2 = 100 kΩ, RC = 5 kΩ, RE = 200 Ω, Rsig = 1 kΩ, RL = 10 kΩ and VCC = 22 V. Assume VBE = 0.7 V and β = 90. Also assume that the capacitors are shorts for ac. The bias circuit has been analyzed and IC = 2.63 mA, Rin = 0.856 kΩ and Rout = RC. If vsig = 20 mVpeak, determine the peak value of vout.arrow_forwardFor the multi-stage amplifier shown below, given the following T1: K = 0.12 mAV ?, VGS (TH) = 5 V, IDQ = 6.7 mA, VGSO = 12.5 V, RD1 = 2.9 kQ, (Assume rd >> Rp) % 3D% 3D T2: Ipss = 6 mA, Vp = -3 V, Ipo = 2.9 mA, VGSQ = -0.95 V, RD2 = 2.4 kQ. (Assume rd >> Rp)% 3D T3: R1 = 48 kQ, R2 = 12 kQ, Rc = 2.2 kQ. ro = 25 kQ, and B = 140 Calculate Ay1. Ay2, Ay3, and the overall voltage gain Avtarrow_forwardAn npn transistor with IS = 1 × 10−16 μA, αF =0.975, and αR = 0.5 is operating with VB E = 0.70 Vand VBC = 0.50 V. By definition, this transistor isoperating in the saturation region. However, in thediscussion it was noted that this transistor actually behaves as if it is still in the forwardactive region even though VBC > 0. Why? Use thetransport model equations to justify your answerarrow_forward
- DESIGN PROJECT Single-Stage Common Emitter Class A AmplifierVoltage Divider Bias Circuit Supply: 10 Vdc to 24 VdcLoad: 1 kΩVoltage Gain: 80 to 400Lower Cutoff Frequency: 100 HzSinusoidal source (zero internal resistance): 50 mVp−pTransistor: Si, β = 75;Base-Collector capacitance= 8 pF; Base-Emitter Capacitance= 25 pFarrow_forwardFor the MOSFETs, if W/L = 0.5, find VG.arrow_forwardA bipolar transistor is operating with vBE =+0.7 V and vBC = +0.3 V. By the strict definitionsgiven in the chapter on bipolar transistors, this transistoris operating in the saturation region. Use thetransport equations to demonstrate that it actuallybehaves as if it is still in the forward-active region.Discuss this result. (You may use IS = 10−15 A,αF = 0.98, and αR = 0.2.)arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
What is a Power Amplifier, And Do I Need One?; Author: Sweetwater;https://www.youtube.com/watch?v=2wkmSm4V00M;License: Standard Youtube License