Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 4, Problem 4.3EP

The parameters of the circuit shown in Figure 4.14 are V D D = 5 V , R 1 = 520 k Ω , R 2 = 320 k Ω , R D = 10 k Ω , and R S i = 0 . Assume transistor parameters of V T N = 0.8 V , K n = 0.20 mA/V 2 , and λ = 0 . (a) Determine the small−signal transistor parameters g m and r o . (b) Find the small−signal voltage gain. (c) Calculate the input and output resistances R i and R o (see Figure 4.15). (Ans. (a) g m = 0.442 mA/V, r o = ; (b) A υ = 4.42 (c) R i = 198 k Ω , R o = R D = 10 k Ω )

(a).

Expert Solution
Check Mark
To determine

The small-signal transistor parameters gm and ro .

Answer to Problem 4.3EP

  gm=0.442mAVro=

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.3EP , additional homework tip  1

  VDD=5V,R1=520,R2=320RD=10,RSi=0VTN=0.8V,Kn=0.20mAV2λ=0

Calculation:

The coupling capacitor Cc1 behaves like open circuit for DC value calculation.

The value of VGSQ is:

  VGSQ=( R 2 R 1 + R 2 )VDDVGSQ=( 320 320+520)×5VGSQ=( 320 840)×5VGSQ=1.905V

The value of drain current is:

  IDQ=Kn( V GS V TN)2IDQ=(0.2)(1.9050.8)2IDQ=0.244mA

The value of VDSQ is:

  VDSQ=VDDIDQRDVDSQ=5(0.244mA)(10k)VDSQ=2.56V

Since,

  VDSQ>VDSQ(sat)VDSQ>(V GSV TN)2.56V>1.1V

The transistor operates in saturation region.

The value of transconductance gm is:

  gm=2KnI DQgm=2( 0.2)( 0.244)gm=0.442mAV

The value of small signal output resistance is:

  ro=1λI DQro=10×0.244ro=

(b).

Expert Solution
Check Mark
To determine

The value of small signal voltage gain.

Answer to Problem 4.3EP

  AV=4.42

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.3EP , additional homework tip  2

  VDD=5V,R1=520,R2=320RD=10,RSi=0VTN=0.8V,Kn=0.20mAV2λ=0

Calculation:

The coupling capacitor Cc1 behaves like short circuit for small signal value calculation.The transistor behaves as linear amplifier circuit, so superposition theorem is applied. The DC voltage VDD is short circuited and the modified figure is:

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.3EP , additional homework tip  3

The output voltage is:

  Vo=Vds=(RD||ro)gmVgs...(1)

The value of Vgs is:

Applying voltage division rule:

  Vgs=(R1||R2( R 1 || R 2 )+R Si)Vi

Putting the value of Vgs in equation 1:

  Vo=(RD||ro)gm( R 1 || R 2 ( R 1 || R 2 )+ R Si )ViVoVi=(RD||ro)gm( R 1 || R 2 ( R 1 || R 2 )+ R Si )VoVi=(RD)gm( R 1 || R 2 ( R 1 || R 2 ))( r o = R Si =0)VoVi=gmRD

The value of small signal voltage gain is:

  AV=VoVi=gmRD=0.442(mA)×10()=4.42

(c).

Expert Solution
Check Mark
To determine

The input and output resistance.

Answer to Problem 4.3EP

  Ri=198Ro=10

Explanation of Solution

Given Information:

The given circuit is shown below,

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.3EP , additional homework tip  4

  VDD=5V,R1=520,R2=320RD=10,RSi=0VTN=0.8V,Kn=0.20mAV2λ=0

Calculation:

The small signal equivalent circuit is:

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.3EP , additional homework tip  5

The input resistance is determined as follows:

  Ri=R1||R2Ri=R1R2R1+R2Ri=520×320520+320Ri=198

The output resistance is determined as follows:

  Ro=RD||roRo=RD(ro=)Ro=10

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Chapter 4 Solutions

Microelectronics: Circuit Analysis and Design

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