PHYSICS F./SCI... W/MOD V.II W/KIT
4th Edition
ISBN: 9780134819884
Author: GIANCOLI
Publisher: PEARSON
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Chapter 40, Problem 57P
To determine
Find the value of collector resistance.
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(a) What happens to IC if the supply voltage is low?
(b) What voltage VCE would occur if the transistor base–emitter junction fails by becoming open?
(c) What voltage VCE would result if the transistor base–emitter junction fails by becoming a short?
(ii)
Show how the bandgap energy of a semiconductor particle varies with the size
of the particle.
Chapter 40 Solutions
PHYSICS F./SCI... W/MOD V.II W/KIT
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
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- (ix) To saturate a BJT, (a) Ia = Icta) (b) Ig> Ic¢pav/Boc (c) Vcc must at least 10 V (d) the emitter must be grounded (x) If the base-emitter junction is open, the collector voltage is (a) Vcc (b) 0 V (c) floating (d) 0.2 Varrow_forwardAssume you are to create n+pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3, 6.2/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know Ln = 10 μm, Lp = 4 μm, μn = 1600 cm2/Vs, μp = 600 cm2/Vs, ni = 1,5 1010 1/cm3, q = 1,602 10-19 C, er = 12, eo = 8,85 10-12 F/m, VT = 25 mV. What is the minimum VCE for operation in active mode assuming hFE = β is very large?arrow_forwardFor the FET transistors, why is the conductivity of the n-channel device is higher than that of the p-channel device?arrow_forward
- and 12pF at (ii) A PN Junction diode has NA = 107 cm, Np = 1015 cm, A = 10 cm, Dp = 10 cm-/s, Dn = 36 cm2/s, and carrier life time in the n and p region be 1us. Determine the %3D ideal diode current for Va =0.1V.arrow_forwardAssume you are to create n+pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3, 7/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know Ln = 10 μm, Lp = 4 μm, μn = 1600 cm2/Vs, μp = 600 cm2/Vs, ni = 1,5 1010 1/cm3, q = 1,602 10-19 C, er = 12, eo = 8,85 10-12 F/m, VT = 25 mV. Calculate barrier potential for EB junction.arrow_forward4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.arrow_forward
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- (c) Calculate the Fermi energy of silver from the data given below: atom. Density of Silver = 10.5 gm/cm³ atomic weight = 108 h = 6.62×10-34 Joule - sec m = 9.1×10-³1 Kg. Avogadro's number =6.02×10-21 atoms/gm-arrow_forwardFor the MOSFET amplifier Shown in figure below, the transistor parameters are VTN=0.8 V. Kn = 1 mA/V², and λ = 0. The circuit parameters are Vpp = 5 V. Rs = 1 KQ. Rp=4 KQ, R₁ = 225 KQ, and R₂ = 175 ko. Calculate the quiescent value of lpq VDD Ca Rin ww ww R₁ R₂ RD www Cc2 Rs www RL Voarrow_forward7. Consider the circuits shown in figures (a) and (b) below 2K ww- 1K ww- 10K 10K ww ww- 10V 10V 10.7V= 5V (а) (b) If the transistors in Figures (a) and (b) have current gain (Bae) of 100 and 10 respectively, then they operate in the (a) active region and saturation region respectively (b) saturation region and active region respectively (c) saturation region in both cases (d) active region in both casesarrow_forward
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