PHYSICS F./SCI... W/MOD V.II W/KIT
4th Edition
ISBN: 9780134819884
Author: GIANCOLI
Publisher: PEARSON
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Chapter 40, Problem 71GP
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The gap between valence and conduction bands in silicon is 1.12 eV. A nickel nucleus in an excited state emits a gamma-ray photon with wavelength 9.31 * 10-4 nm. How many electrons can be excited from the top of the valence band to the bottom of the conduction band by the absorption of this gamma ray?
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Chapter 40 Solutions
PHYSICS F./SCI... W/MOD V.II W/KIT
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
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- Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure 9.12 (a) Density of state for a free electron gas; (b) probability that a state is occupied at T = 0 K; (c) density if occupied states at T = 0 k.arrow_forwardWhat is the longest wavelength for a photon that can excite a valence election into the conduction band across an energy gap of 0.80 eV?arrow_forwardAt what temperature, in terms of Tc, is the critical field of a superconductor one-half its value at T = 0 K?arrow_forward
- Q#07: The maximum wavelength of light that a certain silicon photocell can detect is 1.11 micrometer (a) what is he energy gap (in eV) between the valence and conduction bands for this photocell (b) Explain why pure silicon is opaque.arrow_forwardThe effective density of states of a piece of silicon is Nc = 2x1319 cm³ in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in the silicon? (d) What is the value of the Fermi-Dirac function f(E) at the conduction band edge?arrow_forwardProblem 5. Assume that at T=300 K, the electron mobility in a silicon sample is 1300 cm²/Vs. If an electric field of 100 V/cm is applied what is the excess energy of the electrons? How does this excess energy compare with the thermal energy? If you assume that the mobility is unchanged how does the same comparison work out at a field of 5 V/cm. (NOTE: Excess energy is equal to ½ m₂* v² where Va is the drift velocity.)arrow_forward
- The peak of the spectral intensity in the emission spectrum of the sun is between 0.4 and 0.8 um wavelength You are using two different semiconductors one with a band gap of 1.24 eV and the other with a band gap of 2.07 eV as photo-absorbers for solar cell application. With the information given, please comment briefly on the likely losses in efficiency they will suffer each.arrow_forwardQ#04. (a) Calculate the number of atoms per unit area in (100), (110) and (111) planes of in bcc crystal with the lattice parameter of 2.5 angstrom.arrow_forwardSilicon is doped with 3×1018 arsenic atoms/cm3 and 8 × 1018 boron atoms/cm3. (a) Is this n- or p-type silicon? (b) What are the hole and electron concentrations at room temperature?arrow_forward
- Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…arrow_forwardConsider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is 1020 cm 3 and the doping concentration in the p region is 101°cm 3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n, = 1.5 x 1010 cm-3 %3D Calculate the minority carrier concentration at the edge of the space charge regions.arrow_forwardAssume that the mobility of electrons in silicon at T = 300 K is µ= 1300 cm²/V-s. Also assume that the mobility is mainly limited by lattice scattering. Determine the electron mobility(cm:/V-s) at T= 400 K. !! 484 864 854 844arrow_forward
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