Lab 10 Manual Wireless LAN Technology and the IEEE 802

QUESTION 2a) How would you characterise power bipolar devices in comparison with power MOSFETs? Illustrate your answer by providing unique features of power MOSFETs. b) Using the aid of a MOSFET diagram, explain operational features of the power MOSFET. Support your explanation using MOSFET operation as a switch. Also, illustrate the conditions needed to drive a power MOSFET in the different regions of operation. c) Discuss four (4) advantages of a bridge or half-bridge forward converter when compared with a single-ended forward converter

1) what is the Voltage & Current rating ofTriode for Alternating Current (TRIAC)  2) 5. Are the following statements correct or wrong? Justify your answer.(a) Thyristors are used only for low voltage, low current applications.(b) MOSFETs are used for high frequency applications.(c) BJT is more efficient than IGBT in high power applications.(d) GTO requires very low current applied to its gate to be turn off.(e) IGBT is a voltage driven device.

Are the following statements correct or wrong? Justify your answer. (a) GTO requires very high current applied to its gate to be turn ofr. (b) IGBT is a current driven device. (c) IGBT is more efficient than BJT in high power applications. (d) Thyristors are used only for low voltage, low current applications. (e) MOSFETS are used for low frequency applications.

Subject:Electronics Engineering How MOSFET has been constructed? Explain the principle of operation of MOSFET at different values of VGS and VDS

Discuss about! 1. Enhancement Type MOSFET 2. Depletion Type MOSFET Construction Systematic Diagrams Working Applications

A) What does VCO stand four? Show by drawing the relationship between its input and output signals. Compare VCO circuit with LC Tank circuit in terms of circuit functionality and how the output is generated in each of them. B) Compare between AM and FM in terms of noise immunity, interference, equipment complexity and cost and line of site transmission.

I want presentation about mosfet / Jft

compares as points and try to make the answer short b) Explain the main differences between BJT (Bipolar Junction Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor), and comment on the impact of such differences on their applications.

1. What type of transistor is BC548? How do you identify its type based on the circuit's diagram?

3. Give the advantages of Microwave Integrated Circuits(MIC's) and discuss about the type of MIC's. 4. Discuss about Microstrip lines with proper diagram and list the advantages.

What is difference between MOSFET, IGBT and BJT? Brief explanation about SCR.

Consider a voltage divider self-biased common emitter circuit, using Ge NPN Transistor(B=100).If R81=10k2 ,R82=5kN,RL= 1kN, RE=2kn and Ic(sat.)=5mA. .Find the position of the Q-point.

MOSFET is operated only in ohmic and active regions. Select one: True False

Q2 EMI is a very important aspect to be considered while designing a switching power supply. Discuss with examples what considerations at the circuit level and PCB level design to avoid failing EMC test. Shed some light also on the EMC test. а. What is EMI and EMC and how to conduct the test What considerations to be taken into account while designing a PCB for a switching power supply with examples b.

In your own words, explain the Channel length modulation effect in MOSFET with a related graph and example circuit. [. a. b. In your own words, explain how MOSFET works as a Switch?

5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.

1. Explain the I-V characteristics of the BJTS (IC-VCE) and MOSFETS (ID-VDs) by explaining the working mode of the devices on the I-V curves.

Answwr for both circuit... Answer for both ckt

question from book ELECTRONIC CIRCUIT DESIGN : Question No. 2 Analyze the circuit in figure 2 to find IDQ, VGSQ and VDS. As given in circuit, the IDSS is8mA but a customer requires current more than this IDSS. Suggest a change in the circuit resistorswithout changing the MOSFET. Prove your suggested circuit by doing load line analysis. Is the Q pointin the new circuit is located at correct location?

In hybrid parameters of a CB BJT circuit, hf is equivalent to ___________. a.AC Alpha b.AC Beta c.DC Beta d.DC Alpha

Topic: Input and Output Characteristics of Transistor in Common Base Configuration   Answer in 2-3 sentences each. Need a kind tutor that will do it for me. Thank you! 1. What are the applications of the common base (CB) configuration? 2. What are the output and input impedances of CB configuration?

When solving FET circuit analysis, mathematical method and graphical method can be used, 1. Compare the two methods in terms of their advantage and disadvantage

3) Determine the following parameters according to the voltage-divider configuration BJT circuit which is given below. 3.a) Calculate Ig,Ic.IE,VCE,PCTransistor 3.b) Draw the load line using parameters which are found above and show Q point on it? Rc R = 10 μF Vo Vị o- 10 μF R2 %3D RE = -. Figure 2. Voltage-divider configuration BJT

Figure 1 shows a well-known circuit configuration with the bypassed source resistor using an n-channel D-MOSFET with yos = 20µS. (i)                Draw the DC equivalent circuit for the Figure 1. (ii)              Calculate the operating point IDQ and VGSQ for the configuration using mathematical method. (iii)            Draw the AC equivalent circuit for the Figure 1. (iv)            Calculate transconductance, gm and rd. (v)              Calculate the input, Zi and output impedance, Zo for the circuit. (vi)            Prove that the equation for the no-load Gain, AvNL, for the circuit is as follows: AvNL = -gm (RD X rd / RD + rd) (vii)          Calculate the no-load gain AVNL. (viii)        Find the value of VoNL if Vi = 30 mV.

5. Are the following statements correct or wrong? Justify your answer. (a) Thyristors are used only for low voltage, low current applications. (b) MOSFETS are used for high frequency applications. (c) BJT is more efficient than IGBT in high power applications. (d) GTO requires very low current applied to its gate to be turn off. (e) IGBT is a voltage driven device.

25mA !!!Draw the load line according to the circuit values ​​given in the experiment scheme. Plot the Q points on the graph for the 25mA value of the IC current. To this current value Find the corresponding VCE voltage on the graph again.

Part A: Potential Divider Biasing Circuit and DC Analysis 1) Objectives a) To draw DC load line based on potential divider biasing cireuit. b) To select a suitable Q-point for the BJT circuit based on the DC load line. c) To perform DC analysis for the given biasing circuit. 2) Parts and Equipment a) Resistors R1 = 20k2, Rc = 1k2 and RE = 2002 b) A Variable resistor R2 c) A DC voltage source, Vcc = 30V d) A BJT transistor with Bpc = 100 and VBE = 0.75V e) Ammeters and Voltmeters f) Multisim online simulation software. +Vcc Rc R2 RE Figure 1

Wifi has different versions that use different frequency bands. Assume that you have two WiFi devices X and Y. Device X operates in 2.4 GHz band and device Y operates in 5 GHz band. (i) Which of these device experience co-channel interference? (ii) What is the major cause of co-channel interference and how can we reduce it for each device?

Question 1: For the Mosfet in the circuit shown below: VTP = 0.8V, and Kp = 200 uA/V2. Find Vs and VD. Where Kp = ½ kp'W/L. +5 V lo=0.4 mA Vs RG = 50 k2 Rp =5 k2 of 1 ww

Draw a chip layout/diagram for the image using a 74LS00 chip.

þuestion 2- A- For the circuit given below in figure 2, you are required to find and answerthe following. 1- What is the importance of IC and VCE while targeting the Q-Point in BJT graph? 2- Determine the Q-Point for the circuit and also draw the DC Load Line. Assume BDC=120. Properly tag all the values on Q-Point graph. Show all steps of calculation. RC 15kO Ci vcC = 30V Boc Vin RB 200k O VBB = 25V Figure 2

The ______ terminal of the JFET is the equivalent of the Emitter terminal of a BJT. a.None of these b.Source c.Gate d.Drain

Topic: Chapter 3, CE problems, DC load line analysis 1. Determine Ig, Ic, Ig, VBE, VCE, and VCg in the circuit shown in figure 1. The transistor has a Bnc = 150. I=7mA Re 100 0 Vcc 10 V 10 k 2. For the fixed bias configuration shown in figure determine Ip Ic ,VCe.Vc.VB,VE 16V 1.8k 510k B=120 3. For the common emitter configuration, the current amplification factor (B) is 90. What will be the value of the current amplification factor (a)? 4. For the Common Emitter configuration shown in Fig3.2, determine the following: a. Ie , Vcc , B ,R RC 22.2kn RB VCE=72V I,=15µA

Solve this: Transistor AC Analysis a. Determine the re b. Calculate the Vb and Vc c. Determine the Zi, Zout, and Av