Lab 10 Manual Wireless LAN Technology and the IEEE 802

This question would help revise concepts related to MOS device and basic circuit design. Please mark all correct answers to the following multiple choice questions. 1.1. Which of the following are true about MOSFET devices? (a) MOS stands for "Metallurgy Of Semiconductors" (b) MOSFET current conduction is due to drift phenomenon (c) An externally induced voltage at the gate is fundamental to inversion layer (d) Naming of "Source" and "Drain" regions are only dependent on aspect ratio 1.2. Which of the following are true about NMOS transistors (a) The threshold voltage can be positive or negative depending on geometry (b) Channel length modulation parameter (A) is always positive (c) Current flows from drain to source (d) Threshold voltage is a fixed value based on process, it cannot be changed by external voltages 1.3. In a MOS device (a) Cas and CGp both have both geometry and voltage dependencies (b) Cas is takes minimum value at saturation while CGD goes to maximum value (c) CoB and…

QUESTION 2a) How would you characterise power bipolar devices in comparison with power MOSFETs? Illustrate your answer by providing unique features of power MOSFETs. b) Using the aid of a MOSFET diagram, explain operational features of the power MOSFET. Support your explanation using MOSFET operation as a switch. Also, illustrate the conditions needed to drive a power MOSFET in the different regions of operation. c) Discuss four (4) advantages of a bridge or half-bridge forward converter when compared with a single-ended forward converter

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Discuss about! 1. Enhancement Type MOSFET 2. Depletion Type MOSFET Construction Systematic Diagrams Working Applications

Subject:Electronics Engineering How MOSFET has been constructed? Explain the principle of operation of MOSFET at different values of VGS and VDS

TOPIC: BIPOLAR JUNCTION TRANSISTOR (BJT)

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I want presentation about mosfet / Jft

Are the following statements correct or wrong? Justify your answer. (a) GTO requires very high current applied to its gate to be turn ofr. (b) IGBT is a current driven device. (c) IGBT is more efficient than BJT in high power applications. (d) Thyristors are used only for low voltage, low current applications. (e) MOSFETS are used for low frequency applications.

I need the answer ASAP!

Modified True or False The subject is basic electronics. please answer my questions. thanks

Answer 10 only. Show the process

Topic: Input and Output Characteristics of Transistor in Common Base Configuration   Answer in 2-3 sentences each. Need a kind tutor that will do it for me. Thank you! 1. What are the applications of the common base (CB) configuration? 2. What are the output and input impedances of CB configuration?

What is difference between MOSFET, IGBT and BJT? Brief explanation about SCR.

Consider a voltage divider self-biased common emitter circuit, using Ge NPN Transistor(B=100).If R81=10k2 ,R82=5kN,RL= 1kN, RE=2kn and Ic(sat.)=5mA. .Find the position of the Q-point.

Q2 EMI is a very important aspect to be considered while designing a switching power supply. Discuss with examples what considerations at the circuit level and PCB level design to avoid failing EMC test. Shed some light also on the EMC test. а. What is EMI and EMC and how to conduct the test What considerations to be taken into account while designing a PCB for a switching power supply with examples b.

engineering notation

MOSFET is operated only in ohmic and active regions. Select one: True False

1. What type of transistor is BC548? How do you identify its type based on the circuit's diagram?

In your own words, explain the Channel length modulation effect in MOSFET with a related graph and example circuit. [. a. b. In your own words, explain how MOSFET works as a Switch?

QUESTIONS 1. Define maximum power point of a solar module. 2. Explain the importance of maximum power point of a solar module.3. Define maximum power point tracker.

5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.