1. A sample of Silicon is doped with 1017 Arsenic atoms/cm3. Find the Hall voltage in a sample with W =350 Hm, A 2.37 x 103cm2, I- 1.8 mA and B2- 200 Tesla 2. Hall measurement is conducted on a silicon sample of unknown doping with W 100cm, A 2.5 x 103cm2, I 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample. -

Delmar's Standard Textbook Of Electricity
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Chapter29: Dc Generators
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1. A sample of Silicon is doped with 1017 Arsenic atoms/cm3. Find the Hall voltage in a
sample with W =350 Hm, A 2.37 x 103cm2, I- 1.8 mA and B2- 200 Tesla
2. Hall measurement is conducted on a silicon sample of unknown doping with W 100cm,
A 2.5 x 103cm2, I 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of
+150mV is measured, find the Hall coefficient, conductivity type, majority carrier
concentration, resistivity and mobility of the semiconductor sample.
-
Transcribed Image Text:1. A sample of Silicon is doped with 1017 Arsenic atoms/cm3. Find the Hall voltage in a sample with W =350 Hm, A 2.37 x 103cm2, I- 1.8 mA and B2- 200 Tesla 2. Hall measurement is conducted on a silicon sample of unknown doping with W 100cm, A 2.5 x 103cm2, I 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample. -
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