Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1x1016electron/m3) with the doping concentration of (2x1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm2.
Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1x1016electron/m3) with the doping concentration of (2x1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm2.
Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter12: The Solid State
Section: Chapter Questions
Problem 9P
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