In the thermal processing of semiconductor materials,annealing ¡s accomplished by heating a silicon waferaccording to a temperature-time recipe and then maintaining a fixed elevated temperature for a prescribedperiod of time. For the process tool arrangement shownas follows,the water is in an evacuated chamberwhose walls are maintained at 27°C and within whichheating lamps maintain a radiant flux q ″ s at its uppersurface. The wafer is 0.78 mm thick, has a thermal conductivity of 30 W/m 2 ⋅ K , and an emissivity that equalsits absorptivity to the radiant flux ( ∈ = α 1 = 0.65 ) . For q ″ s = 3.0 × 10 5 W/m 2 , the temperature on its lower surface is measured by a radiation thermometer and foundto have a value of T w , i = 997 °C . To avoid warping the wafer and inducing slip planes in the crystal structure, the temperature difference acrossthe thickness of the wafer must be less than 2°C. Is thiscondition being met?
In the thermal processing of semiconductor materials,annealing ¡s accomplished by heating a silicon waferaccording to a temperature-time recipe and then maintaining a fixed elevated temperature for a prescribedperiod of time. For the process tool arrangement shownas follows,the water is in an evacuated chamberwhose walls are maintained at 27°C and within whichheating lamps maintain a radiant flux q ″ s at its uppersurface. The wafer is 0.78 mm thick, has a thermal conductivity of 30 W/m 2 ⋅ K , and an emissivity that equalsits absorptivity to the radiant flux ( ∈ = α 1 = 0.65 ) . For q ″ s = 3.0 × 10 5 W/m 2 , the temperature on its lower surface is measured by a radiation thermometer and foundto have a value of T w , i = 997 °C . To avoid warping the wafer and inducing slip planes in the crystal structure, the temperature difference acrossthe thickness of the wafer must be less than 2°C. Is thiscondition being met?
Solution Summary: The author explains that the condition of warping of wafer could occur.
In the thermal processing of semiconductor materials,annealing ¡s accomplished by heating a silicon waferaccording to a temperature-time recipe and then maintaining a fixed elevated temperature for a prescribedperiod of time. For the process tool arrangement shownas follows,the water is in an evacuated chamberwhose walls are maintained at 27°C and within whichheating lamps maintain a radiant flux
q
″
s
at its uppersurface. The wafer is 0.78 mm thick, has a thermal conductivity of
30
W/m
2
⋅
K
, and an emissivity that equalsits absorptivity to the radiant flux
(
∈
=
α
1
=
0.65
)
. For
q
″
s
=
3.0
×
10
5
W/m
2
, the temperature on its lower surface is measured by a radiation thermometer and foundto have a value of
T
w
,
i
=
997
°C
.
To avoid warping the wafer and inducing slip planes in the crystal structure, the temperature difference acrossthe thickness of the wafer must be less than 2°C. Is thiscondition being met?
If I noticed copied solution I will give dislike.
In a solar collector 1 m wide by 4 m long, the glass cover plate at an average temperature of 29°C is spaced 40 mm from the absorber plate at an average temperature of 75°C. Estimate the convection heat loss coefficient from the absorber plate to the glass when the collector is positioned horizontally. What is the convection heat loss coefficient if the spacing reduced to 10 mm?
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A vertical cylindrical container is being cooled in ambient air at 25°C with no air circulation.If the initial temperature of the container surface is 100°C, compute the surfaceheat transfer coefficient due to natural convection during the initial cooling period. Thediameter of the container is 1 m, and it is 2m high.
HELP ME IF MY SOLUTION IS CORRECT, I THINK THIS IS NOT COMPLETE YET. KINDLY HELP ME PLEASE
In a solar collector 1 m wide by 4 m long, the glass cover plate at an average temperature of 29°C is spaced 40 mm from the absorber plate at an average temperature of 75°C. Estimate the convection heat loss coefficient from the absorber plate to the glass when the collector is positioned horizontally. What is the convection heat loss coefficient if the spacing reduced to 10 mm?
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