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(a)
Interpretation:
The picture of bands for each metal
Concept introduction:
The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.
(b)
Interpretation:
The hardest metal should be determined and also, metal with highest melting point among
Concept introduction:
The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.
(c)
Interpretation:
The softest metal and also, metal with lowest melting point among
Concept introduction:
The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.
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Chapter 12 Solutions
EBK CHEMISTRY
- The ore alvite often has a formula: (Hf, Th, Zr)SiO4.xH2 Suggest why Thorium would be an isostructural substitute for hafnium or zirconium in the mineral structure. (Inorganic Chemistry)arrow_forwardStructure of the Bis-( dimethylglyoximato) nickel(II) ( write the C.N , geometry type):arrow_forwardThe disproportionation of CO to graphite and CO₂ is ther-modynamically favored but slow.(a) What does this mean in terms of the magnitudes of the equi-librium constant (K), rate constant (k), and activation energy (Ea)?(b) Write a balanced equation for the disproportionation of CO.(c) Calculate K꜀ at 298 K. (d) Calculate Kₚ at 298 Karrow_forward
- 5. Write a report on the element vanadium (v), where the report includes the properties and characteristics of the metal, its ores, its interactions, its modification methods, and the crystalline structures of the mineralsarrow_forwardPlease write a balanced formula for U(VI) (as uraninite; UO2) using Mn2+ as a reductant for U(VI) and MnO2 pyrolusite as a product.arrow_forwardExplain the terms : (a) Intrinsic semiconductor (b) Extrinsic semiconductor.arrow_forward
- Predict the structure of each of the following silicate minerals (network, sheets, double chains, and so forth). Give the oxidation state of each atom.(a) Apophyllite, KCa4(Si8O20)F ? 8 H2O(b) Rhodonite, CaMn4(Si5O15)(c) Margarite, CaAl2(Al2Si2O10)(OH)2arrow_forwardThe red color of ruby is due to the presence of Cr(III) ions at octahedral sites in the close-packed oxide lattice of Al2O3. Draw the crystal-field splitting diagram for Cr(III) in this environment. Suppose that the ruby crystal is subjected to high pressure. What do you predict for the variation in the wavelength of absorption of the ruby as a function of pressure? Explain.arrow_forwardHow are each of the following involved in iron metallurgy:(a) slag; (b) pig iron; (c) steel; (d) basic-oxygen process?arrow_forward
- what is the role of silica in the metallurgy of copper?arrow_forwardSi is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm³. (a) Is this n-type or p-type and why? (b) What are the electron and hole concentrations at 300K? (use ni = 1010 cm³). (c) Calculate resistivity of Si is doped with donor density of Np = 2x1015 (use n¡ = 10!º cm³) and NA = 0 (use n¡ = 1010 ; µn = 1320 cm²/Vs, µp = 460 cm²/Vs) cm (d) In a Germanium semiconductor at T= 250 K (n¡ = 1x1012 cm³), it is found that po = 4no and that Nd = 0. Determine po, no, and Na. (e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K: Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x1031 K*.cm3 (1.12eV) and B = 2.31x1030 K³.cm³ (0.66€V).arrow_forward
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