PHYSICS F./SCI... W/MOD V.II W/KIT
PHYSICS F./SCI... W/MOD V.II W/KIT
4th Edition
ISBN: 9780134819884
Author: GIANCOLI
Publisher: PEARSON
Question
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Chapter 38, Problem 41P

(a)

To determine

The probability of the electron passing through the barrier.

(b)

To determine

The probability that the electron will reflect.

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(ii) A beam of electrons is incident on a barrier 5 eV high and 0.5 nm wide. Find the energy they should have if 1% of them are to get through the barrier.
3) Assume a one-dimension step potential with electrons described by free electron wave in positive x-direction in region I coming from the left towards the step edge. propagating V Vo || X Assume the energy E of the electron is 4 eV in region I and the potential is V₁-2 eV. Calculate the probability of finding an electron in regions I and II as a function of x.
3. In a particular semiconductor device, an oxide layer forms a barrier 0.6 nm wide and 9V high between two conducting wires. An electron beam is accelerated through a 4V potential so that each electron approach the barrier with an energy of 4 eV. (a) What percent of the incident electrons will tunnel through the barrier? (b) Is aa for this system much larger than one, much less than one, or the same order of magnitude as one? Can we approximate the transmission coefficient using the formula below? - 16 (1-E) e E Vo T= 16; e-2aa (1) (c) Find the transmission coefficient using Eq. 1 and compare with your answer from part (a). Was Eq. 1 a good approximation?

Chapter 38 Solutions

PHYSICS F./SCI... W/MOD V.II W/KIT

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