PHYSICS FOR SCIEN & ENGNR W/MOD MAST
4th Edition
ISBN: 9780134112039
Author: GIANCOLI
Publisher: PEARSON
expand_more
expand_more
format_list_bulleted
Question
Chapter 40, Problem 19Q
To determine
How the transistor increase the output power?
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
In a bipolar junction transistor:
A) all the three regions (the emitter, the base and the collector) have equal concentrations of impurity
B) the emitter has the least concentration of impurity
C) the collector has the least concentration of impurity
D) the base has the least concentration of impurity
1) A Si p-n-p transistor has the following properties at room temperature:
Tn = Tp
0.1 us
NE
1019 сті
Emitter concentration
— 10 ст2/s
-3
Dn = Dp
NB 3D 1016 ст
Base concentration
Nc
1019 ст
-3
= Collector concentration
WE
3 µm
Emitter width
W
1.5 um
Metallurgical base width, i.e. the distance between base-emitter junction and
base-collector junction
A = 10-5 cm² = Cross-sectional area
If VCB = 0 V and VEB = 0.6 V, calculate the following:
ЕВ
a) Neutral base width (WB)
b) Base transport factor
c) Emitter injection efficiency
d)
a, ß and y.
e) Ic, Ig and Ig.
A Pentium IV microchip has dimensions of 217 mm x 217 mm. Suppose each transistor on the chip is made up of a 10 x10 square of atoms (that is 100 atoms per transistor). How many transistors could fit on the Pentium IV chip if the spacing between the silicon atoms is 0.54 nm?
Chapter 40 Solutions
PHYSICS FOR SCIEN & ENGNR W/MOD MAST
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
Knowledge Booster
Similar questions
- A high electron mobility transistor (HEMT) controls large currents by applying a small voltage to a thin sheet of electrons. The density and mobility of the electrons in the sheet are critical for the operation of the HEMT. HEMTS consisting of AlGaN/GaN/Si are being studied because they promise better performance at higher powers, temperatures, and frequencies than conventional silicon HEMTS can achieve. In one study, the Hall effect was used to measure the density of electrons in one of these new HEMTs. When a current of 12.1 ?A flows through the length of the electron sheet, which is 1.12 mm long, 0.223 mm wide, and 15.1 nm thick, a magnetic field of 1.05 T perpendicular to the sheet produces a voltage of 0.511 mV across the width of the sheet. What is the density of electrons per m3 in the sheet?arrow_forwardIn the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…arrow_forward(a). (b). Describe the cut-off mode of a transistor. An amplifier circuit with a bipolar junction transistor (BJT) is shown in the Figure 4 Vin C1 47 μF (i). (ii). (iii). (iv). ww ww R1 10 ΚΩ R2 4.7 ΚΩ ww R3 100 Ω R4 1 ΚΩ Figure 4 C3 47 μF C2 47 μF Determine the BJT configuration, Vout Describe the BJT input and output terminals, State two of the BJT output characteristics, V 15 V Calculate the current amplification factor of the BJT, if emitter current, IE, base current, B and collector current, Ic is 4.080 mA, 35.41 μA and 4.045 mA respectively.arrow_forward
- 2) In one of the most recent silicon industry achievements of 2021, a single transistor takes up a rectangular area on a microchip that measures 10[nm] by 2O[nm]. The early microchips in the 1970's had rectangular transistors that each measured approximátely 20[um] by 40[µm]. How manv of the new 2021 transistors could fit inside the same area of a single 1970 transistor? A) 400 B) 4000 C) 40,000 D) 400,000 É 4,000,000arrow_forwardThe output characteristics of a transistor in common-emitter configuration can be regarded as straight lines connecting the following points 田 IB = 20 μΑ 50 μΑ 80 μΑ VCE(V) 1.0 8.0 1.0 8.0 1.0 8.0 Ic (mA) 1.2 1.4 3.4 4.2 6.1 8.1 Plot the characteristics and superimpose the load line for a 1 k load, given that the supply voltage is 9V and the d.c. base bias is 50 µA. The signal input resistance is 800 Q. When a peak input current of 30 HA varies sinusoidally about mean bias of 50 HA, determine (a) The quiescent collector current (b) The current gain (c) The voltage gain (d) The power gainarrow_forward17.0 K/s ll N 8:59 The collector current in a BJT is -3 temparature-independent a) True b) False In a power transistor, the IB vs VBE -4 curve is a) a parabolic curve b) an exponentially decaying curve c) resembling the diode curve d) a straight line Y = IB O أخری For a power transistor, if the base -5 current IB is increased keeping VCE constant, then a) IC increases b) IC decreasesarrow_forward
- New For the circuit shown in the Figure, the collector current for the Q1 transistor IC = 2.1 mA was calculated for you. Determine the total voltage gain AvT=Vo/Vi VCC 1.5 k2 1 μF 7.5 kN 50 μF Q2 B = 200 6.2 kN 10 µF B= 100 V o 10 mV 3.9 k2 1 k2 100 μF Zoom imagearrow_forwardNonearrow_forwardHow can the two-state nature of transistors be used to represent information?arrow_forward
- A student sets up a circuit as below to gather data for characterizing a diode:arrow_forwardA ALAS semiconductor crystal has a lattice constant of a = 0.13 nm, the volume density of As atoms in this crystal will be: O 3.641e24 /cm^3 2.048e30 /cm^3 O 1.821e24 /cm^3 O 3.550e16 /cm^3 O 1.593e24 /cm^3arrow_forwardA 18 V peak-to-peak sinusoidal voltage is applied across a silicon diode and series resistor. The maximum voltage across the diode is O 17.3 V O 14.3 V O 18v O 0.7 V O 9v O 10v O Other:arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
Principles of Physics: A Calculus-Based TextPhysicsISBN:9781133104261Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
Glencoe Physics: Principles and Problems, Student...PhysicsISBN:9780078807213Author:Paul W. ZitzewitzPublisher:Glencoe/McGraw-Hill
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax
Principles of Physics: A Calculus-Based Text
Physics
ISBN:9781133104261
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning
Glencoe Physics: Principles and Problems, Student...
Physics
ISBN:9780078807213
Author:Paul W. Zitzewitz
Publisher:Glencoe/McGraw-Hill