PHYSICS FOR SCIEN & ENGNR W/MOD MAST
4th Edition
ISBN: 9780134112039
Author: GIANCOLI
Publisher: PEARSON
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Chapter 40, Problem 73GP
To determine
Find the latent heat of fusion of the solid.
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(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of
a given copper sample are 1.28 x 1010 m and 8.98 x 10' kg/m' respectively, carry out the following:
Calculate the mass of the copper sample. T'ake Avogadro's number, NA = 6.023 x 1023
atoms/mole.
(i)
(ii) If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle
at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength
1.52 x 10-10 m is used for the analysis.
(c) Give two uses of pure copper and two commercial applications of copper alloys.
the partition function of an ideal gas of diatomic molecules in an external electric field & is
[g(V, T, 8)]"
Q(N, V, T, 8)
N!
where
(2mmkT
312 (87 IkT
-hv/2kT
e
q(V,T, 8)= V{
h2
(kT'
(µ8
sinh kT)
h2
(1 – e-hv/kT)
Here I is the moment of inertia of the molecule; v is its fundamental vibrational frequency;
and u is its dipole moment. Using this partition function along with the thermodynamic
relation,
dA = -S dT –p dV – M de
where M=Nū, where u is the average dipole moment of a molecule in the direction of the
external field &, show that
kT]
coth
kT,
Sketch this result versus & from & =0 to & =∞ and interpret it.
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T=300 K:
N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The hole concentration?
Chapter 40 Solutions
PHYSICS FOR SCIEN & ENGNR W/MOD MAST
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
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- 3) The Seebeck voltage for Copper Constantan (Cn) thermocouple is given by the linear relation V = a+ bT, For Cu : a = 0.6 mV, andb=0.008 mV/K. For Cn : a = -20 mV, and b = -0.056 mV/K. Calculate the thermoelectric power when the hot junction is at 100 C. 24 where T is the absolute temperature of the hot junction, and a and b are constantsarrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardSilicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?arrow_forward
- (Electroplating) A steel part with surface area A = 130 cm² is to be tin-plated. What average plating thickness will result if 15 amps are applied for 10 min in an acid sulfate electrolyte bath? The cathode efficiency for tin is E = 90% and the plating constant C = 4.21 x 10-2 mm³/amp-s. V = CIt V = ECIt d = V A Typical cathode efficiencies in electroplating and values of plating constant C. Compiled from [18]. Plate Metal Electrolyte Cadmium (2) Cyanide Chromium (3) Chromium-acid-sulfate Copper (1) Gold (1) Nickel (2) Silver (1) Tin (4) Zinc (2) Cyanide Cyanide Acid sulfate Cyanide Acid sulfate Chloride Plating Constant ca Cathode Efficiency % mm³/amp-s (in³/amp-min) 6.73 × 10-² (2.47 × 10-4) X 2.50 × 10-2 (0.92 × 10-4) 7.35 x 10-2 10.6 x 10-² 3.42 x 10-2 (2.69 × 10-4) (3.87 × 10-4) (1.25 × 10-4) 10.7 x 10-2 (3.90 × 10-4) 4.21 x 10-2 (1.54 × 10-4) 4.75 × 10-2 (1.74 x 10-4) 90 15 98 80 95 100 90 95 ¹Most common valence given in parentheses (); this is the value assumed in determining…arrow_forwardSilicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forward
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