University Physics with Modern Physics, Volume 1 (Chs. 1-20) (14th Edition)
14th Edition
ISBN: 9780133978049
Author: Hugh D. Young, Roger A. Freedman
Publisher: PEARSON
expand_more
expand_more
format_list_bulleted
Question
Chapter 42, Problem 42.22DQ
To determine
How to make compensated silicon that has twice as many acceptors as donors.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
How could you make compensated silicon that has twice as many acceptors as donors?
-3 and
Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1016 cm
donor doping concentrations of 1015 cm-3.
%3D
Calculate the width of the space charge region in the pn junction when a reverse biased voltage
of 5 V is applied.
Note/ n; = 1.5 x 1010
cm
Es
= 1.035 x 10 12F/cm
What is the hole diffusion constant (cm2/s) in a piece of silicon doped with
3x1015cm-3 of donors and 7x1015cm-3 of acceptors at 350K and with mobility 310
cm2/V.s?
9.4
O 10
O 7.4
O 11.4
Chapter 42 Solutions
University Physics with Modern Physics, Volume 1 (Chs. 1-20) (14th Edition)
Ch. 42.1 - If electrons obeyed the exclusion principle but...Ch. 42.2 - Prob. 42.2TYUCh. 42.3 - Prob. 42.3TYUCh. 42.4 - One type of thermometer works by measuring the...Ch. 42.5 - Prob. 42.5TYUCh. 42.6 - Prob. 42.6TYUCh. 42.7 - Suppose a negative charge is placed on the gate of...Ch. 42 - Van der Waals bonds occur in many molecules, but...Ch. 42 - Prob. 42.2DQCh. 42 - The H2+ molecule consists of two hydrogen nuclei...
Ch. 42 - The moment of inertia for an axis through the...Ch. 42 - Prob. 42.5DQCh. 42 - Prob. 42.6DQCh. 42 - Prob. 42.7DQCh. 42 - The air you are breathing contains primarily...Ch. 42 - Prob. 42.9DQCh. 42 - Prob. 42.10DQCh. 42 - What factors determine whether a material is a...Ch. 42 - Prob. 42.12DQCh. 42 - Prob. 42.13DQCh. 42 - Prob. 42.14DQCh. 42 - Prob. 42.15DQCh. 42 - Prob. 42.16DQCh. 42 - Prob. 42.17DQCh. 42 - Prob. 42.18DQCh. 42 - Prob. 42.19DQCh. 42 - Prob. 42.20DQCh. 42 - Prob. 42.21DQCh. 42 - Prob. 42.22DQCh. 42 - Prob. 42.23DQCh. 42 - Prob. 42.24DQCh. 42 - If the energy of the H2 covalent bond is 4.48 eV,...Ch. 42 - An Ionic Bond, (a) Calculate the electric...Ch. 42 - Prob. 42.3ECh. 42 - Prob. 42.4ECh. 42 - Prob. 42.5ECh. 42 - Prob. 42.6ECh. 42 - Prob. 42.7ECh. 42 - Two atoms of cesium (Cs) can form a Cs2 molecule....Ch. 42 - Prob. 42.9ECh. 42 - Prob. 42.10ECh. 42 - A lithium atom has mass 1.17 1026 kg, and a...Ch. 42 - Prob. 42.12ECh. 42 - When a hypothetical diatomic molecule having atoms...Ch. 42 - The vibrational and rotational energies of the CO...Ch. 42 - Prob. 42.15ECh. 42 - Prob. 42.16ECh. 42 - Prob. 42.17ECh. 42 - Prob. 42.18ECh. 42 - Prob. 42.19ECh. 42 - Prob. 42.20ECh. 42 - Prob. 42.21ECh. 42 - Prob. 42.22ECh. 42 - Prob. 42.23ECh. 42 - Prob. 42.24ECh. 42 - Prob. 42.25ECh. 42 - Prob. 42.26ECh. 42 - Prob. 42.27ECh. 42 - Prob. 42.28ECh. 42 - Prob. 42.29ECh. 42 - Prob. 42.30ECh. 42 - Prob. 42.31ECh. 42 - Prob. 42.32ECh. 42 - Prob. 42.33PCh. 42 - Prob. 42.34PCh. 42 - Prob. 42.35PCh. 42 - The binding energy of a potassium chloride...Ch. 42 - (a) For the sodium chloride molecule (NaCl)...Ch. 42 - Prob. 42.38PCh. 42 - Prob. 42.39PCh. 42 - Prob. 42.40PCh. 42 - Prob. 42.41PCh. 42 - Prob. 42.42PCh. 42 - Prob. 42.43PCh. 42 - Prob. 42.44PCh. 42 - Prob. 42.45PCh. 42 - Prob. 42.46PCh. 42 - Prob. 42.47PCh. 42 - Prob. 42.48PCh. 42 - Prob. 42.49PCh. 42 - Prob. 42.50PCh. 42 - Prob. 42.51PCh. 42 - Prob. 42.52PCh. 42 - Prob. 42.53CPCh. 42 - Prob. 42.54CPCh. 42 - Prob. 42.55CPCh. 42 - Prob. 42.56PPCh. 42 - Prob. 42.57PPCh. 42 - Prob. 42.58PP
Knowledge Booster
Similar questions
- The measured density of a CsCl crystal is 3.988 g/cm3. What is the equilibrium separate distance of Cs+ and Cl- ions?arrow_forwardThe characteristic energy for KCl is 1.4105eV . (a) Determine for the KC1 molecule, (b) Find the separation distance between the K arid Cl atoms.arrow_forwardAt what temperature, in terms of Tc, is the critical field of a superconductor one-half its value at T = 0 K?arrow_forward
- The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?arrow_forwardA silicon p-n junctionof 1 cm2 area consists of a two-sided step junction with an n-region of 1017donors/cm3 and a p-region of 2×107 acceptor/cm3. All donors and acceptors are ionized. Find the built-in potential.arrow_forwardSilicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forward
- Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is 1020 cm 3 and the doping concentration in the p region is 101°cm 3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n, = 1.5 x 1010 cm-3 %3D Calculate the minority carrier concentration at the edge of the space charge regions.arrow_forward(b) Describe the nature and origin of various forces existing between the atoms of a crystal. Explain the formation of a stable bond using the potential energy versus interatomic distance curve. Assume that the potential energy of two particles in the field of each other is given by U(R) = - R where A and B are constants. R9 (i) Show that the particles form a stable compound for R= R. = (9B/A)/8 (R, is equilibrium separation) i) Show that for stable configuration, the energy of attraction is nine times the energy of repulsion. 8A (iii) Show that the potential energy of the system under stable configuration is 9Rearrow_forwardIt is true that one can force a polished flat end of a p type silicon to a flat end of an n type silicon to form a good p-n junction? Why?arrow_forward
- Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardSilicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
Glencoe Physics: Principles and Problems, Student...PhysicsISBN:9780078807213Author:Paul W. ZitzewitzPublisher:Glencoe/McGraw-Hill
Physics for Scientists and Engineers with Modern ...PhysicsISBN:9781337553292Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax
Glencoe Physics: Principles and Problems, Student...
Physics
ISBN:9780078807213
Author:Paul W. Zitzewitz
Publisher:Glencoe/McGraw-Hill
Physics for Scientists and Engineers with Modern ...
Physics
ISBN:9781337553292
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning