![Bundle: Physics for Scientists and Engineers with Modern Physics, Loose-leaf Version, 9th + WebAssign Printed Access Card, Multi-Term](https://www.bartleby.com/isbn_cover_images/9781305932302/9781305932302_largeCoverImage.gif)
(a)
The quantity that fermi energy depends on according to free-electron theory of metals and the magnitude of dependency of the quantity.
(b)
To show that the equation of Fermi energy
(c)
The factor by which free electron concentration in exceed than in potassium using Table 43.2.
(d)
Whether copper or potassium have larger Fermi energy.
(e)
The factor by which Fermi energy of Cu is larger than K.
(f)
Whether the behavior is consistent with that predicted by equation
![Check Mark](/static/check-mark.png)
Want to see the full answer?
Check out a sample textbook solution![Blurred answer](/static/blurred-answer.jpg)
Chapter 43 Solutions
Bundle: Physics for Scientists and Engineers with Modern Physics, Loose-leaf Version, 9th + WebAssign Printed Access Card, Multi-Term
- Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure 9.12 (a) Density of state for a free electron gas; (b) probability that a state is occupied at T = 0 K; (c) density if occupied states at T = 0 k.arrow_forwardThe measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?arrow_forwardSuppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1 at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of electrons/holes in silicon at different doping concentrations under different temperature is shown in the following figure. 0.1 102 102 10, 10 0.01 0.01 A kgou aoarrow_forward
- Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.arrow_forwardQuestion-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.arrow_forwardQ 2/ If the electron density of a pure semiconductor at a temperature of 17 C is m3/1016, and when the temperature increases by ten times, the electron density becomes m3/1019. If impurities of arsenic are added to one end of this material, the concentration of the majority charge carriers becomes m3/1023, and impurities of boron are added to the other end, so that the concentration of the majority charge carriers becomes m3/1021, thus forming a p-n junction with a contact area of 10-7 m2. Calculate what I am at 17.C 1- Fermi position at each end 2- Energy gap in ev 3- The ratio of the current of holes to the current of electrons through the junction if you know that the mobility of electrons is m/Vs 0.5 and the mobility of holes is m/Vs 0.25 and the length of the minority electrons is 0.4 mm and the length of the minority holes is 0.3 mm 4- Density of carriers for each party (majority and minority) 5- The effort of the divider 6- The junction current at an amplitude of 0.4 7- The…arrow_forward
- Volume 2. a) The intrinsic carrier concentration in GaAs at 300 K is 1.8 x 106 cm³. What is the carrier concentration in fm³ at this temperature? b) The mobility of holes in GaAs at 300 K is 400 cm²/V-s. What is the mobility in m²/V-s?arrow_forwardFor the free electrons in a solid, what is the value of the E/EF ratio knowing that the occupancy factor of the energy level E is equal to 0.05 at a temperature such that kT=EF/4? (NOTE: EF is the Fermi energy).arrow_forwardConsider the density of states N(E) of a conductor. (a) Obtain an analytical expression for the density of states at Fermi energy N(E_F) as a function of m and n, where m is the electron mass and n is the number of conduction electrons per unit volume. This expression should be in units of m^{ -2}eV^{-1} (meter^{-2}. electron-Volt^{-1}). (b) Calculate the numerical value of N(E_F) for Copper. To estimate the value of n, consider the following data for Copper: molar mass 64.54 g/mol and density 8.96 g/cm^{3}. (c) Compare the result of part (b) with the result obtained from the N(E) x E curve and the analytical expression for N(E). Do the values agree?arrow_forward
- At T=300K, the electron concentration of a semiconductor material is n, = 10" cm*. The bandgap energy E=1.leV, Nc =2.8×10" cm, and N, =1.0x10" cm³. (1) Determine the hole concentration P. . Is this n-type or p-type semiconductor? (2) Determine E F – EF ; (3) What is the dopant concentration, N, or .? (Please evaluate N, or N.)arrow_forward5. a) Consider a GaAs pn junction, in thermal equilibrium at 300 K, under zero-bias and with dopant concentrations of Na = 1 x 1017 cm³ on the p-side of the junction and Nd = 5 x 1015 cm3 on the n-side. ɛr = 13.1 for GaAs. The cross-sectional area of the junction is 1 x 102 cm?. Determine the following junction characteristics; state your answers in this form and show all work on a separate page. Vbi = V Xp = m Energy barrier AE = eV W = Xn = |{max| = N/C m Qn = Qp = C b) Consider the GaAs pn junction as described above under a reverse-bias of 2 V. Determine the following junction characteristics; state your answers in this form and show work on a separate page. Energy barrier AE = eV W =arrow_forwardProblem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…arrow_forward
- Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage LearningUniversity Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStaxPhysics for Scientists and Engineers with Modern ...PhysicsISBN:9781337553292Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
![Text book image](https://www.bartleby.com/isbn_cover_images/9781111794378/9781111794378_smallCoverImage.gif)
![Text book image](https://www.bartleby.com/isbn_cover_images/9781938168185/9781938168185_smallCoverImage.gif)
![Text book image](https://www.bartleby.com/isbn_cover_images/9781337553292/9781337553292_smallCoverImage.gif)